Product Information

M29DW323DB70N6E

M29DW323DB70N6E electronic component of Micron

Datasheet
NOR Flash Parallel 3V/3.3V 32M-bit 4M x 8/2M x 16 70ns Automotive 48-Pin TSOP Tray

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

576: USD 1.2876 ea
Line Total: USD 741.66

0 - Global Stock
MOQ: 576  Multiples: 576
Pack Size: 576
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 576
Multiples : 576
576 : USD 1.2876

0 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 14
Multiples : 1
14 : USD 2.5594
50 : USD 2.4565
100 : USD 2.3121

0 - WHS 3


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 14
Multiples : 1
14 : USD 2.5594
50 : USD 2.4565
100 : USD 2.3121

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
Deleted
LoadingGif

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M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. APackages V = 2.7V to 3.6V for Program, Erase CC and Read V =12V for Fast Program (optional) PP ACCESS TIME: 70ns PROGRAMMING TIME 10s per Byte/Word typical Double Word/ Quadruple Byte Program TSOP48 (N) 12 x 20mm MEMORY BLOCKS Dual Bank Memory Array: 8Mbit+24Mbit Parameter Blocks (Top or Bottom FBGA Location) DUAL OPERATIONS Read in one bank while Program or Erase in other TFBGA48 (ZE) ERASE SUSPEND and RESUME MODES 6 x 8mm Read and Program another Block during Erase Suspend UNLOCK BYPASS PROGRAM COMMAND Faster Production/Batch Programming V /WP PIN for FAST PROGRAM and PP WRITE PROTECT TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE 64 bit Security Code EXTENDED MEMORY BLOCK Extra block used as security block or to store additional information LOW POWER CONSUMPTION Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE Manufacturer Code: 0020h Top Device Code M29DW323DT: 225Eh Bottom Device Code M29DW323DB: 225Fh Automotive Certified Parts Available January 2018 1/51M29DW323DT, M29DW323DB TABLE OF CONTENTS FEATURES SUMMARY . 1 Figure 1. Packages 1 TABLE OF CONTENTS . 2 SUMMARY DESCRIPTION . 6 Figure 2. Logic Diagram 6 Table 1. Signal Names 6 Figure 3. TSOP Connections 7 Figure 4. TFBGA48 Connections (Top view through package) 8 Table 2. Bank Architecture . 8 Figure 5. Block Addresses (x8) . 9 Figure 6. Block Addresses (x16) . 10 SIGNAL DESCRIPTIONS . 11 Address Inputs (A0-A20) . 11 Data Inputs/Outputs (DQ0-DQ7) . 11 Data Inputs/Outputs (DQ8-DQ14) 11 Data Input/Output or Address Input (DQ15A1). . 11 Chip Enable (E) 11 Output Enable (G) 11 Write Enable (W) . 11 V Write Protect (V WP) . 11 PP/ PP/ Reset/Block Temporary Unprotect (RP) 11 Ready/Busy Output (RB) . 11 Byte/Word Organization Select (BYTE) 12 V Supply Voltage (2.7V to 3.6V). .12 CC V Ground . 12 SS BUS OPERATIONS 13 Bus Read . 13 Bus Write . 13 Output Disable . 13 Standby 13 Automatic Standby 13 Special Bus Operations 13 Electronic Signature . 13 Block Protect and Chip Unprotect 13 Table 3. Bus Operations, BYTE = V 14 IL Table 4. Bus Operations, BYTE = V 14 IH COMMAND INTERFACE . 15 Read/Reset Command . 15 Auto Select Command . 15 2/51

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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