Product Information

JS28F128P33TF70A

JS28F128P33TF70A electronic component of Micron

Datasheet
NOR Flash Parallel 2.5V/3.3V 128M-bit 8M x 16 70ns 56-Pin TSOP Tray

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0 - Warehouse 1

MOQ : 1
Multiples : 1
1 : USD 9.0861
10 : USD 8.2478
25 : USD 7.5454
100 : USD 7.1876
N/A

     
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Numonyx P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC) Datasheet Product Features High performance: Security: 60ns initial access time for Easy BGA One-Time Programmable Registers: 64 OTP bits, programmed with unique 70ns initial access time for TSOP information by Numonyx 25ns 8-word asynchronous-page read 2112 OTP bits, available for customer mode programming 52MHz with zero wait states, 17ns clock-to- Absolute write protection: V = V data output synchronous-burst read mode PP SS Power-transition erase/program lockout 4-, 8-, 16-, and continuous-word options Individual zero-latency block locking for burst mode 3.0V buffered programming at 1.8MByte/s Individual block lock-down capability (Typ) using 256-word buffer Password Access feature Buffered Enhanced Factory Programming at Software: 3.2MByte/s (typ) using 256-word buffer 20s (Typ) program suspend Architecture: 20s (Typ) erase suspend Asymmetrically-blocked architecture Basic Command Set and Extended Function Four 32-KByte parameter blocks: top or Interface (EFI) Command Set compatible bottom configuration Common Flash Interface capable 128-KByte main blocks Density and Packaging: Blank Check to verify an erased block 56-Lead TSOP package (128-Mbit, 64-Mbit) Voltage and Power: 64-Ball Easy BGA package (128-Mbit, 64- V (core) voltage: 2.3V 3.6V Mbit) CC V (I/O) voltage: 2.3V 3.6V CCQ 16-bit wide data bus Standby current: 35A(Typ) for 64-Mbit, Quality and Reliability: 50A(Typ) for 128-Mbit JESD47E Compliant Continuous synchronous read current: Operating temperature: 40C to +85C 23mA (Typ) at 52 MHz Minimum 100,000 erase cycles per block 65nm process technology Datasheet Jul 2011 1 Order Number: 208034-04Legal Lines and Disclaimers INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. Numonyx may make changes to specifications and product descriptions at any time, without notice. Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Designers must not rely on the absence or characteristics of any features or instructions marked reserved or undefined. Numonyx reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx s website at

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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