Product Information

EDB4432BBBJ-1D-F-D

EDB4432BBBJ-1D-F-D electronic component of Micron

Datasheet
DRAM Chip Mobile LPDDR2 SDRAM 4G-Bit 128Mx32 1.2V 134-Pin WFBGA Tray

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1520: USD 7.9268 ea
Line Total: USD 12048.74

0 - Global Stock
MOQ: 1520  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1520
Multiples : 1
1520 : USD 7.9268

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Mounting Style
Package / Case
Data Bus Width
Memory Size
Maximum Clock Frequency
Access Time
Supply Voltage - Max
Supply Voltage - Min
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Organization
Brand
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
EDB5432BEBH-1DAAT-F-D electronic component of Micron EDB5432BEBH-1DAAT-F-D

DRAM Chip LPDDR2 SDRAM 512M-Bit 16Mx32 1.2V/1.8V 134-Pin VF-BGA Dry Pack
Stock : 0

EDB8132B4PB-8D-F-D electronic component of Micron EDB8132B4PB-8D-F-D

DRAM Chip Mobile LPDDR2 SDRAM 8Gbit 256Mx32 1.8V
Stock : 0

EDB8132B4PM-1D-F-D electronic component of Micron EDB8132B4PM-1D-F-D

DRAM Chip Mobile LPDDR2 SDRAM 8G-Bit 256M x 32 1.2V/1.8V 168-Pin FBGA Dry Pack
Stock : 0

EDB4432BBPA-1D-F-R electronic component of Micron EDB4432BBPA-1D-F-R

LPDDR2 128MX32 PLASTIC GREEN V
Stock : 0

EDB4432BBPA-1D-F-D electronic component of Micron EDB4432BBPA-1D-F-D

DRAM Chip Mobile LPDDR2 SDRAM 4G-Bit 128Mx32 1.2V/1.8V 168-Pin WFBGA
Stock : 0

EDB8132B4PM-1D-F-R electronic component of Micron EDB8132B4PM-1D-F-R

DRAM Chip Mobile LPDDR2 SDRAM 8G-Bit 256M x 32 1.2V/1.8V 168-Pin FBGA T/R
Stock : 0

EDB8164B4PT-1DIT-F-R electronic component of Micron EDB8164B4PT-1DIT-F-R

DRAM LPDDR2 8G 128MX64 FBGA DDP
Stock : 0

EDB5432BEBH-1DAAT-F-R electronic component of Micron EDB5432BEBH-1DAAT-F-R

DRAM LPDDR2 512M 16MX32 FBGA
Stock : 0

EDB5432BEBH-1DIT-F-R electronic component of Micron EDB5432BEBH-1DIT-F-R

DRAM LPDDR2 512M 16MX32 FBGA
Stock : 0

EDB8164B4PT-1DAT-F-D electronic component of Micron EDB8164B4PT-1DAT-F-D

DRAM Chip LPDDR2 SDRAM 8Gbit 128M X 64 256-Ball BGA T/R
Stock : 0

Image Description
MT53D1024M32D4DT-053 AIT:D electronic component of Micron MT53D1024M32D4DT-053 AIT:D

DRAM LPDDR4 32G 1GX32 FBGA QDP
Stock : 0

IS43R16320F-5BL electronic component of ISSI IS43R16320F-5BL

DRAM Chip DDR SDRAM 512M-Bit 32Mx16 200MHz 5ns Speed 2.5V/2.6V 0 to 70°C 60-Ball BGA
Stock : 100

MT53E128M32D2DS-053 AUT:A electronic component of Micron MT53E128M32D2DS-053 AUT:A

DRAM LPDDR4 4G 128MX32 FBGA AUT DDP
Stock : 1360

MT40A1G16RC-062E IT:B electronic component of Micron MT40A1G16RC-062E IT:B

DRAM Chip DDR4 SDRAM 16Gbit 1G X 16 1.2V 96-Pin FBGA
Stock : 0

MT40A1G8SA-062E IT:E electronic component of Micron MT40A1G8SA-062E IT:E

DRAM Chip DDR4 SDRAM 8G-Bit 1G X 8 1.2V 78-Pin FBGA
Stock : 1852

MT53E256M32D2DS-053 AAT:B electronic component of Micron MT53E256M32D2DS-053 AAT:B

DRAM Chip Mobile LPDDR4 SDRAM 8G-Bit 256M x 32 1.8V 200-Pin WFBGA
Stock : 3284

MT53E768M32D4DT-053 AIT:E electronic component of Micron MT53E768M32D4DT-053 AIT:E

DRAM LPDDR4 24G 768MX32 FBGA AIT QDP
Stock : 0

MT40A512M16TB-062E:J electronic component of Micron MT40A512M16TB-062E:J

DRAM DDR4 8G 512MX16 FBGA
Stock : 0

MT40A2G8VA-062E:B electronic component of Micron MT40A2G8VA-062E:B

DRAM Chip DDR4 SDRAM 16Gbit 2G x 8 1.2V 78-Pin FBGA
Stock : 0

IS42S16160J-6TLI-TR electronic component of ISSI IS42S16160J-6TLI-TR

DRAM 256M, 3.3V, SDRAM, 16Mx16, 166MHz, 54 pin TSOP II RoHS, IT, T&R
Stock : 552

Embedded LPDDR2 SDRAM Features Embedded LPDDR2 SDRAM EDB4416BBBH, EDB4432BBBJ Options Marking Features Density/Page Size Ultra-low-voltage core and I/O power supplies 4Gb / 1-CS - single die 44 Frequency range Organization 53310 MHz (data rate range: 106620 Mb/s/pin) x16 16 4n prefetch DDR architecture x32 32 8 internal banks for concurrent operation V /V /V : 1.8V/1.2V/1.2V B DD1 DD2 DDQ Multiplexed, double data rate, command/address Revision B inputs commands entered on each CK t/CK c FBGA green package edge 10mm x 11.5mm x 0.75mm, 134- BH Bidirectional/differential data strobe per byte of ball x16 data (DQS t/DQS c) 10mm x 11.5mm x 0.75mm, 134- BJ Programmable READ and WRITE latencies (RL/WL) ball x32 Burst length: 4, 8, and 16 Timing cycle time Per-bank refresh for concurrent operation 1.875ns RL = 8 -1D Auto temperature-compensated self refresh Operating temperature range (ATCSR) by built-in temperature sensor From 30C to +85C Blank Partial-array self refresh (PASR) From 40C to +85C IT Selectable output drive strength (DS) Clock-stop capability Lead-free (RoHS-compliant) and halogen-free packaging Table 1: Key Timing Parameters Speed Clock Rate Data Rate Grade (MHz) (Mb/s/pin) RL WL 1D 533 1066 8 4 Table 2: S4 Configuration Addressing Architecture 256 Meg x 16 128 Meg x 32 Die configuration 32 Meg x 16 x 8 banks 16 Meg x 32 x 8 banks Row addressing 16K A 13:0 16K A 13:0 Column addressing 2K A 10:0 1K A 9:0 X26P4QTWDSPK-13-10166 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 134b 2e0e embedded lpddr2 Rev. B 09/16 EN 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Embedded LPDDR2 SDRAM Features Figure 1: LPDDR2 Part Numbering E D B 44 32 B B BH -1D IT -F Embedded Memory Environment Code F = Lead-free (RoHS-compliant) and halogen-free Type D = Packaged device Operating Temperature IT = 40C to +85C Product Family Blank = 30C to +85C B = DDR2 Mobile RAM Density Speed (package only) 1D = 1066 Mbps 44 = 4Gb/1-CS Organization Package BH = 134-ball WFBGA (10mm x 11.5mm) 16 = x16 32 = x32 BJ = 134-ball WFBGA (10mm x 11.5mm) Power Supply and Interface Revision = V = 1.2V B = V = 1.8V V DDQ DD1 DD2 S4B device HSUL FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Microns FBGA part marking decoder is available at www.micron.com/decoder. Table 3: Package Codes and Descriptions Package Die per Solder Ball Code Ball Count Ranks Channels Size (mm) Package Composition BH 134 1 1 (x16) 10 x 11.5 x 0.75, 0.65 pitch SDP SAC302 BJ 134 1 1 (x32) 10 x 11.5 x 0.75, 0.65 pitch SDP SAC302 Notes: 1. SDP = single-die package 2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). X26P4QTWDSPK-13-10166 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 134b 2e0e embedded lpddr2 Rev. B 09/16 EN 2016 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted