SIC20120PTA Features Zero Reverse Recovery Current Positive Temperature Coefficient 20 Amp High-Speed Switching Moisture Sensitivity Level 1 Silicon Carbide Epoxy Meets UL 94 V-0 Flammability Rating Schottky Barrier Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant(Note 1) Suffix designates Rectifier RoHS Compliant. See ordering information) Benefits 1200 Volts Temperature-Independent Performance Essentially No Switching Loss Higher Efficiency Reduced EMI TO-247 Reduction of Heat Sink Requirements Applications C B Switching Power Supply E Power Factor Correction Solar Inverter A Maximum Ratings PIN Q Operating Junction Temperature Range: -55C to +175C 2 1 3 Storage Temperature Range: -55C to +175C Thermal Resistance: 1.65C/W Junction to Case P F MCC Device Marking K Part Number V J SIC20120PTA SIC20120PTA D Peak Repetitive Reverse V 1200V RRM Voltage G Surge Peak Reverse Voltage V 1200V RSM DIMENSIONS INCHES MM DIM NOTE DC Reverse Voltage V 1200V DC MIN MAX MIN MAX A 0.787 0.866 20.00 22.00 B 0.598 0.638 15.20 16.20 T =155C Average Forward Current I 10A* / 20A** J F C 0.185 0.208 4.70 5.30 D 0.035 0.059 0.90 1.50 T =25C, t =10ms, C p E 0.059 0.094 1.50 2.40 Peak Forward Surge Current I 90A* / 180A** FSM Half Sine Pulse F 0.067 0.091 1.70 2.30 J 0.019 0.031 0.48 0.80 Repetitive Peak Forward T =25C, t =10ms, C p I 35A* / 70A** K 0.748 0.833 19.00 21.15 FRM Current Half Sine Pulse P 0.122 0.189 3.10 4.80 Q 0.118 0.150 3.00 3.80 120W* / 240W** Power Dissipation P T =25C D C V 0.106 0.134 2.70 3.40 G 0.197 0.224 5.00 5.70 Note :1. High Temperature Solder Exemption Applied, see EU Directive Annex 7a. 2.*Per leg, ** Per Device Internal Structure PIN 1 PIN 2 CASE PIN 3 Rev.3-2-12012020 1/4 MCCSEMI.COMSIC20120PTA Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Conditions Typ. Max. Units I =10A, T =25C F j 1.5 1.8 V Forward Voltage V F V I =10A, T =175C 3.0 F j 2.2 V =1200V, T=25C A R j 80 2 Reverse Leakage Current I R A V =1200V, T=175C 35 R j Total Capacitive Charge Q 60 nC C V =800V, T =2=25C R j 750 pF V =0V, T=25C , f=1MHz R j 55 Total capacitance C pF V =400V, T=25C , f=1MHz R j pF 45 V =800V, T=25C , f=1MHz R j Capacitance Stored Energy E J C 16 V =800V R Curve Characteristics(Per leg) Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 2 - Typical Reverse Leakage Characteristics 20 1000 18 Tj=25C 100 Tj=25C 16 Tj=75C Tj=75C Tj=125C Tj=125C 14 Tj=175C 10 Tj=175C 12 10 1 8 0.1 6 4 0.01 2 1E-3 0 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V (V) V (V) F R Rev.3-2-12012020 2/4 MCCSEMI.COM I (A) F I (A) R