Product Information

MCU80N06-TP

MCU80N06-TP electronic component of Micro Commercial Components (MCC)

Datasheet
MOSFET N-Ch Enh FET 40Vds 60A 20Vgs 1.25W
Manufacturer: Micro Commercial Components (MCC)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.6578 ea
Line Total: USD 1644.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500

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MCU80N06-TP
Micro Commercial Components (MCC)

2500 : USD 0.9374
5000 : USD 0.928
10000 : USD 0.9187
15000 : USD 0.9095
20000 : USD 0.9005
25000 : USD 0.8915
30000 : USD 0.8825
50000 : USD 0.8737
100000 : USD 0.865

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 2500
Multiples : 2500

Stock Image

MCU80N06-TP
Micro Commercial Components (MCC)

2500 : USD 0.6578

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

MCU80N06 Features Fast Switching Improved dv/dt Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix-H MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +175C Storage Temperature Range: -55C to +175C DPAK (Note 1) Thermal Resistance: 1.76C/W Junction to Case J Parameter Symbol Rating Unit H Drain-Source Voltage V 60 V DS 1 C O F Gate-Source Volltage V 20 V 2 4 E GS I 3 T =25C 80 A C Continuous Drain Current I D M T =100C 56 A K V C Q Pulsed Drain Current I 150 A DM A (Note 2) G E 290 mJ Single Pulse Avalanche Energy AS L D B Total Power Dissipation P 85 W D Note: 1.Surface Mounted on FR4 Board, t 10 sec. 2.EAS Condition: T =25C,V =30V,V =10V,L=0.5mH,R =25. J DD G g DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.087 0.094 2.20 2.40 Internal Structure B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 D D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 F 0.201 0.215 5.10 5.46 G 0.190 4.83 TYP. H 0.236 0.244 6.00 6.20 1.GATE G 2.DRAIN I 0.086 0.094 2.18 2.39 3.SOURCE J 0.386 0.409 9.80 10.40 4.DRAIN K 0.114 2.90 TYP. S L 0.055 0.067 1.40 1.70 0.063 1.60 TYP. M O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 0.211 5.35 TYP. V Rev.3-4-12012020 1/4 MCCSEMI.COMMCU80N06 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 60 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS I V =60V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS (Note 3) V V =V , I =250A 1 1.6 2.4 V Gate-Threshold Voltage GS(th) DS GS D (Note 3) R V =10V, I =30A m Drain-Source On-Resistance 11.3 13 DS(on) GS D (Note 3) g V =10V, I =5.5A 30 S Forward Tranconductance FS DS D (Note 4) Dynamic Characteristics Input Capacitance C 2498 iss C V =25V,V =0V,f=1MHz pF Output Capacitance 185 oss DS GS Reverse Transfer Capacitance C 80 rss Q Total Gate Charge 36 g V =30V,V =10V,I =30A Gate-Source Charge Q 9.6 nC DS GS D gs Q Gate-Drain Charge 6.6 gd t Turn-On Delay Time 12 d(on) t Turn-On Rise Time 5.2 r V =30V,I =2A,R =1 DD D L ns V =10V,R =3 GS GEN t Turn-Off Delay Time 38 d(off) t Turn-Off Fall Time 27 f Drain-Source Body Diode Characteristics Continuous Body Diode Current I 80 A S (Note 3) V I =20A, V =0V 1.4 V Body Diode Voltage SD S GS Reverse Recovery Time t 280 ns rr T =25C, I =30A, J F (Note 3) di/dt=100A/s Q Reverse Recovery Charge 2.8 C rr Forward Turn-On Time t Intrinsic Turn-On Time is Negligible (Turn-On is Dominated by LS+LD) on Note 3. Pulse Test : Pulse Width 300s, Duty Cycle 1%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-4-12012020 2/4 MCCSEMI.COM

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Micro Commercial Components (MCC) may also be referenced as

MCC
MCC(Micro Commercial Components)
MICRO COMMERCIAL
Micro Commercial Co
Micro Commercial Components

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