X-On Electronics has gained recognition as a prominent supplier of VP2206N3-G mosfet across the USA, India, Europe, Australia, and various other global locations. VP2206N3-G mosfet are a product manufactured by Microchip. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

VP2206N3-G Microchip

VP2206N3-G electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.VP2206N3-G
Manufacturer: Microchip
Category:MOSFET
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; 740mW; TO92
Datasheet: VP2206N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 1.8625 ea
Line Total: USD 46.56

Availability - 657
Ships to you between
Mon. 03 Jun to Fri. 07 Jun
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
657 - WHS 1


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 25
Multiples : 25
25 : USD 1.8625
100 : USD 1.775
250 : USD 1.7
500 : USD 1.675
1000 : USD 1.5875
3000 : USD 1.525
5000 : USD 1.5
8000 : USD 1.475

7 - WHS 2


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.4863

7 - WHS 3


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 6
Multiples : 1
6 : USD 1.4863

100 - WHS 4


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 4.394
5 : USD 3.367
14 : USD 3.185
100 : USD 3.068

1 - WHS 5


Ships to you between
Mon. 10 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 2.2695
10 : USD 1.9824
30 : USD 1.8114
100 : USD 1.6389
500 : USD 1.5595
1000 : USD 1.5235

654 - WHS 6


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 50
Multiples : 25
50 : USD 2.5655
100 : USD 2.4006
250 : USD 2.258
500 : USD 2.1857

100 - WHS 7


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 19
Multiples : 1
19 : USD 5.6127
25 : USD 4.7969
50 : USD 4.6879
100 : USD 4.5791

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the VP2206N3-G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VP2206N3-G and other electronic components in the MOSFET category and beyond.

Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP2206 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. Ease of paralleling This combination produces a device with the power handling Low C and fast switching speeds ISS capabilities of bipolar transistors, and the high input impedance High input impedance and high gain and positive temperature coefficient inherent in MOS devices. Excellent thermal stability Characteristic of all MOS structures, this device is free from Integral source-to-drain diode thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a wide range Motor controls of switching and amplifying applications where very low threshold Converters voltage, high breakdown voltage, high input impedance, low Amplifiers input capacitance, and fast switching speeds are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Options Wafer / Die Options Device NW NJ ND TO-39 TO-92 (Die in wafer form) (Die on adhesive tape) (Die in waffle pack) VP2206 VP2206N2 VP2206N3-G VP5206NW VP5206NJ VP5206ND For packaged products, -G indicates package is RoHS compliant (Green). TO-39 package is RoHS compliant (Green). Devices in Wafer / Die form are RoHS compliant (Green). Refer to Die Specification VF52 for layout and dimensions. Product Summary Pin Configurations R I DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) () (A) DRAIN GATE VP2206N2 SOURCE -60 0.9 -4.0 SOURCE VP2206N3-G DRAIN GATE TO-39 (N2) TO-92 (N3) Absolute Maximum Ratings Product Marking Parameter Value VP Drain-to-source voltage BV DSS YY = Year Sealed 2206N2 WW = Week Sealed Drain-to-gate voltage BV YYWW DGS Gate-to-source voltage 20V Package may or may not include the following marks: Si or O O Operating and storage temperature -55 C to +150 C TO-39 (N2) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous SiVP YY = Year Sealed operation of the device at the absolute rating level may affect device reliability. All 2 206 WW = Week Sealed voltages are referenced to device ground. YYWW = Green Packaging Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VP2206 Thermal Characteristics I I Power Dissipation D D I I JC JA DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (A) (A) (A) (A) (W) TO-39 -0.75 -8.0 6.0 20.8 125 -0.75 -8.0 TO-92 -0.64 -4.0 1.0 125 170 -0.64 -4.0 Notes: I (continuous) is limited by max rated T . D J O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -60 - - V V = 0V, I = -10mA DSS GS D V Gate threshold voltage -1.0 - -3.5 V V = V , I = -10mA GS(th) GS DS D O V Change in V with temperature - -4.3 -5.5 mV/ C V = V , I = -10mA GS(th) GS(th) GS DS D I Gate body leakage - -1.0 -100 nA V = 20V, V = 0V GSS GS DS - - -50 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - -10 mA V = 0V, T = 125C GS A -0.85 -2.0 - V = -5.0V, V = -25V GS DS I On-state drain current D(ON) -4.0 -9.0 - A V = -10V, V = -25V GS DS - 1.3 1.5 V = -5.0V, I = -1.0A GS D R Static drain-to-source on-state resistance DS(ON) - 0.75 0.9 V = -10V, I = -3.5A GS D O R Change in R with temperature - 0.85 1.2 %/ C V = -10V, I = -3.5A DS(ON) DS(ON) GS D G Forward transductance 800 1400 - mmho V = -25V, I = -2.0A FS DS D C Input capacitance - 325 450 ISS V = 0V, GS C Common source output capacitance - 125 180 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 30 40 RSS t Turn-on delay time - 4.0 15 d(ON) V = -25V, DD t Rise time - 16 25 r I = -4.0A, ns D t Turn-off delay time - 16 50 d(OFF) R = 10 GEN t Fall time - 22 50 f V Diode forward voltage drop - -1.1 -1.6 V V = 0V, I = -3.5A SD GS SD t Reverse recovery time - 500 - ns V = 0V, I = -1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V Pulse 10% Generator INPUT R -10V GEN 90% t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) f INPUT Output 0V R 90% 90% L OUTPUT 10% 10% V DD VDD Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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