X-On Electronics has gained recognition as a prominent supplier of VP3203N3 mosfet across the USA, India, Europe, Australia, and various other global locations. VP3203N3 mosfet are a product manufactured by Microchip. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

VP3203N3 Microchip

VP3203N3 electronic component of Microchip
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See Product Specifications
Part No.VP3203N3
Manufacturer: Microchip
Category:MOSFET
Description: MOSFET 30V 0.6Ohm
Datasheet: VP3203N3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 8.9518 ea
Line Total: USD 17.9

Availability - 1
Ships to you between
Wed. 05 Jun to Tue. 11 Jun
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 2
Multiples : 1
2 : USD 8.6075
20 : USD 7.825
25 : USD 6.5125

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the VP3203N3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VP3203N3 and other electronic components in the MOSFET category and beyond.

VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP3203 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertexs well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with the Low C and fast switching speeds ISS power handling capabilities of bipolar transistors, and the High input impedance and high gain high input impedance and positive temperature coefcient Excellent thermal stability inherent in MOS devices. Characteristic of all MOS Integral source-to-drain diode structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Motor controls Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high Ampliers input impedance, low input capacitance, and fast switching Switches speeds are desired. Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I Package Options DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) TO-92 TO-243AA (SOT-89) Die* () (A) VP3203 VP3203N3-G VP3203N8-G VP3203ND -30 0.6 14.0 -G indicates package is RoHS compliant (Green) * Mil visual screening available. Pin Congurations DRAIN DRAIN SOURCE SOURCE DRAIN Absolute Maximum Ratings GATE GATE Parameter Value TO-92 (N3) TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSS Product Marking Drain-to-gate voltage BV DGS S i V P YY = Year Sealed Gate-to-source voltage 20V 3 2 0 3 WW = Week Sealed O O Operating and storage temperature -55 C to +150 C Y Y W W = Green Packaging O Soldering temperature* 300 C Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device TO-92 (N3) may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. W = Code for week sealed V P 2 L W = Green Packaging * Distance of 1.6mm from case for 10 seconds. Packages may or may not include the following marks: Si or TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comVP3203 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 -650 -4.0 0.74 125 170 -650 -4.0 TO-243AA (SOT-89) -1100 -4.0 1.6 15 78 -1100 -4.0 I (continuous) is limited by max rated T. D j Mounted on FR5 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -30 - - V V = 0V, I = -10mA DSS GS D V Gate threshold voltage -1.0 - -3.5 V V = V , I = -10mA GS(th) GS DS D O V Change in V with temperature - - -5.5 mV/ C V = V , I = -10mA GS(th) GS(th) GS DS D I Gate body leakage - -1.0 -100 nA V = 20V, V = 0V GSS GS DS - - -10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - -1.0 mA V = 0V, T = 125C GS A I On-state drain current - -14 - A V = -10V, V = -5.0V D(ON) GS DS TO-92 - - 1.0 V = -4.5V, I = -1.5A GS D SOT-89 - - 1.0 V = -4.5V, I = -750mA Static drain-to-source on-state GS D R DS(ON) resistance TO-92 - - 0.6 V = -10V, I = -3.0A GS D SOT-89 - - 0.6 V = -10V, I = -1.5A GS D O R Change in R with temperature - - 1.0 %/ C V = -10V, I = -1.5A DS(ON) DS(ON) GS D G Forward transductance 1000 2000 - mmho V = -25V, I = -2.0A FS DS D C Input capacitance - 200 300 ISS V = 0V, GS C Common source output capacitance - 100 120 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 45 60 RSS t Turn-on delay time - - 10 d(ON) V = -25V, t Rise time - - 15 DD r ns I = -2.0A, D t Turn-off delay time - - 25 d(OFF) R = 10 GEN t Fall time - - 25 f V Diode forward voltage drop - - -1.6 V V = 0V, I = -1.5A SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = -1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V PULS E 10% GENERATOR INPUT -10V R 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) F Outpu t 0V INPU T 90% 90% R L OUTPUT 10% 10% V V DD DD 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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