Product Information

UPS540E3/TR13

UPS540E3/TR13 electronic component of Microchip

Datasheet
Diode: Schottky rectifying; SMD; 40V; 5A; Powermite3; Ufmax:0.45V

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5233 ea
Line Total: USD 0.52

5 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

UPS540E3/TR13
Microchip

1 : USD 0.5233
100 : USD 0.5175

     
Manufacturer
Product Category
Semiconductor Structure
Mounting
Case
Type Of Diode
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
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UPS340e3 WWW.Microsemi .COM UPS340e3 UPS540e3 5 A Schottky Barrier Rectifier KEY FEATURES DESCRIPTION Very low thermal resistance package This UPS540e3 in the Powermite3 package is a high efficiency Schottky RoHS Compliant with e3 suffix part rectifier that is also RoHS compliant offering high current/power capabilities number previously found only in much larger packages. They are ideal for SMD Guard-ring-die construction for transient applications that operate at high frequencies. In addition to its size protection advantages, the Powermite3 package includes a full metallic bottom that Efficient heat path with Integral locking eliminates the possibility of solder flux entrapment during assembly and a bottom metal tab unique locking tab act as an efficient heat path to the heat-sink mounting. Low forward voltage Its innovative design makes this device ideal for use with automatic insertion Full metallic bottom eliminates flux equipment. entrapment Compatible with automatic insertion Low profile-maximum height of 1mm IMPORTANT: For the most current data, consult MICROSEMIs website: UPS340e3 WWW.Microsemi .COM UPS340e3 UPS540e3 5 A Schottky Barrier Rectifier ELECTRICAL PARAMETERS 25 C (unless otherwise specified) Parameter Symbol Conditions Min Typ. Max Units Forward Voltage (Note 1) 0.47 I = 5 A , T = 25 C 0.54 F j I = 5 A , T = 125 C 0.45 F j V V F I = 10 A , T = 25 C F j 0.62 I = 10 A , T = 125 C F j 0.59 Reverse Break Down Voltage (Note 1) V I = 0.5 mA 40 V BR R Reverse Current (Note1) V = 40 V, T = 25C 0.030 0.5 R j mA I F V = 40 V, T =125 C 2.5 20 R j Capacitance C V = 4 V F = 1 MH 250 pF T R Z Note: 1 Short duration test pulse used to minimize self heating effect Copyright 2007 Microsemi Page 2 10-15-2007 Rev E

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