TP5335K1-G

TP5335 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description High Input Impedance and High Gain The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced Low Power Drive Requirement vertical DMOS structure and a well-proven silicon gate Ease of Paralleling manufacturing process. This combination produces a Low C and Fast Switching Speeds ISS device with the power handling capabilities of bipolar Excellent Thermal Stability transistors and the high input impedance and positive Integral Source-Drain Diode temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free Free from Secondary Breakdown from thermal runaway and thermally induced secondary breakdown. Applications Microchips vertical DMOS FETs are ideally suited to a Logic-Level Interfaces (Ideal for TTL and CMOS) wide range of switching and amplifying applications Solid-State Relays where high breakdown voltage, high input impedance, Analog Switches low input capacitance, and fast switching speeds are desired. Power Management Telecommunication Switches Package Type 3-lead SOT-23 (Top view) DRAIN SOURCE GATE See Table 2-1 for pin information. 2018-2020 Microchip Technology Inc. DS20005704C-page 1TP5335 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-Source Voltage....................................................................................................................................... BV DSS Drain-to-Gate Voltage .......................................................................................................................................... BV DGS Gate-to-Source Voltage.......................................................................................................................................... 20V Junction Temperature, T .................................................................................................................... 55C to +150C J Storage Temperature, T ...................................................................................................................... 55C to +150C S Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS COMMERCIAL Electrical Specifications: T = T = 25C unless otherwise specified. All DC parameters are 100% tested at 25C A J unless otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle.) Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-Source Breakdown BV 350 V V = 0V, I = 100 A DSS GS D Voltage Gate Threshold Voltage V 1 2.4 V V = V , I = 1 mA GS(th) DS GS D Change in V GS(th) V 4.5 mV/C V = V , I = 1 mA (Note 1) GS(th) DS GS D with Temperature Gate Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS V = Maximum rating, DS 10 A V = 0V GS Zero-Gate Voltage Drain Current I DSS V = Maximum rating, DS 1 mA V = 0V, T = 125C (Note 1) GS A 200 mA V = 4.5V, V = 25V GS DS On-State Drain Current I D(ON) 400 mA V = 10V, V = 25V GS DS 75 V = 4.5V, I = 150 mA Static Drain-to-Source On-State GS D R DS(ON) Resistance 30 V = 10V, I = 200 mA GS D Change in R with V = 10V, I = 200 mA DS(ON) GS D 1.7 %/C RDS(ON) Temperature (Note 1) Note 1: Specification is obtained by characterization and is not 100% tested. DC ELECTRICAL CHARACTERISTICS AUTOMOTIVE Electrical Specifications: T = T = (55C, 25C, or 150C) unless otherwise specified. All DC parameters are A J 100% tested at all three temperatures unless otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle.) Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-Source Breakdown BV 350 V V = 0V, I = 100 A DSS GS D Voltage Gate Threshold Voltage V 1 2.4 V V = V , I = 1 mA GS(th) DS GS D Change in V GS(th) V 3.3 mV/C V = V , I = 1 mA (Note 1) GS(th) DS GS D with Temperature 100 nA V = 20V, V = 0V GS DS Gate Body Leakage I V = 20V, V = 0V, GSS GS DS 220 nA T = 150C A Note 1: Specification is obtained by characterization and is not 100% tested. DS20005704C-page 2 2018-2020 Microchip Technology Inc.