Product Information

TN2640K4-G

TN2640K4-G electronic component of Microchip

Datasheet
Transistor: N-MOSFET; unipolar; 400V; 2A; 2.5W; TO252

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.8475 ea
Line Total: USD 3.85

5774 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4726 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

TN2640K4-G
Microchip

1 : USD 3.2775
25 : USD 2.737
100 : USD 2.4725

     
Manufacturer
Product Category
Kind Of Channel
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Gate-Source Voltage
Pulsed Drain Current
Power Dissipation
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Product TN2640 Summary Sheet N-Channel Enhancement-Mode DMOS FET Applications: DC-DC converters 10V 90% VDD Solid state relays INPUT Pulse R L Ultrasound pulsers 10% Generator 0V OUTPUT t t Telecom switches (ON) (OFF) R GEN Photo voltaic drivers t t t t d(OFF) f d(ON) r Analog switches VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Switching Waveform and Test Circuit Product Overview: 3-Lead TO-252 (K4) TN2640K4 N-Channel Enhancement-Mode DMOS FET. The device features fast switching speeds, low parasitic capacitances and a low gate threshold for ease of driving the FET. Its D-Pak package gives designers the flexibility to use the device in a wide range of power switching and amplifying applications. It has a high breakdown voltage (400V), a low on- resistance (5.0W) and a low input capacitance (225pF) for fast switching applications. Adding these features into the D-Pak package increases the power dissipation capability to 2.5W in small footprints utilizing surface mount technology. Its low input and output leakage feature improves standby power dissipation while minimizing signal attenuation. 8-Lead SOIC (LG) Features: Benefits: Can be operated directly from logic level input signals. Low threshold 2.0V max. Eliminates the need for a level translator. Eliminates the need to supply DC current into the High input impedance gate. Low input capacitance Improves overall efficiency. Maximizes switching speed to help improve overall Fast switching speeds efficiency. 3-Lead TO-92 (N3) Low on resistance Improves overall efficiency Free from secondary breakdown Maximizes efficiency, minimizes power dissipation. compared to bipolar transistors Improves overall reliability. Improves measurement accuracy. Minimizes signal Low input and output leakage attenuation. Increases the power dissipation capability for surface Addition of D-Pak option mount technology to 2.5W. 120711TN2640 N-Channel Enhancement-Mode DMOS FET Ordering Information / Availability Part Number Package Option Samples Product Availability TN2640K4-G 3-Lead TO-252 (Green) Now 4-6 Weeks ARO TN2640LG-G 8-Lead SOIC (Green) Now 4-6 Weeks ARO TN2640N3-G 3-Lead TO-92 (Green) Now 4-6 Weeks ARO -G indicates the part is RoHS compliant (Green). Product Contact For any questions regarding the TN2640 please contact your local area Supertex sales office, or contact the main office in the US at: Telephone: 800-222-9883 Fax: 408-222-4895 E-mail: mktg supertex.com Web site: www.supertex.com 1235 Bordeaux Drive, Sunnyvale, CA 94089

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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