TC2185-2.5VCTTR

TC2014/2015/2185 50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass Features General Description Low Supply Current: 80 A (Max) The TC2014, TC2015 and TC2185 are high-accuracy (typically 0.4%) CMOS upgrades for bipolar Low Low Dropout Voltage: 140 mV (Typ.) 150 mA Drop-out Regulators (LDOs), such as the LP2980. High-Output Voltage Accuracy: 0.4% (Typ.) Total supply current is typically 55 A 20 to 60 times Standard or Custom Output Voltages lower than in bipolar regulators. Power-Saving Shutdown Mode The key features of the device include low noise oper- Reference Bypass Input for Ultra Low-Noise ation (plus bypass reference), low dropout voltage Operation typically 45mV for the TC2014, 90mV for the Fast Shutdown Response Time: 60 sec (Typ.) TC2015, and 140 mV for the TC2185, at full load and Overcurrent and Overtemperature Protection fast response to step changes in load. Supply current falls to zero when is reduced to 0.5 A (max) and V Space-Saving 5-Pin SOT-23A Package OUT the shutdown input is low. These devices also Pin-Compatible Upgrades for Bipolar Regulators incorporate overcurrent and overtemperature Wide Operating Temperature Range: protection. -40C to +125C The TC2014, TC2015 and TC2185 are stable with an Standard Output Voltage Options: output capacitor of 1 F and have maximum output - 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, currents of 50 mA, 100 mA and 150 mA, respectively. 3.3V, 5.0V current versions, see the TC1107 For higher-output (DS21356), TC1108 (DS21357) and TC1173 Applications (DS21362) (I = 300 mA) data sheets. OUT Battery-Operated Systems Portable Computers Typical Application Medical Instruments Instrumentation 1 5 V V V V OUT IN IN OUT Cellular/GSM/PHS Phones + + Linear Post-Regulator for SMPS 1F 1F Pagers Related Literature 2 TC2014 GND Application Notes: AN765, AN766, AN776 and TC2015 AN792 TC2185 Package Type 5-Pin SOT-23A 34 Bypass SHDN V Bypass OUT 0.01 F Reference 4 5 Bypass Cap (Optional) TC2014 Shutdown Control TC2015 (from Power Control Logic) TC2185 2 1 3 V GND SHDN IN 2001-2012 Microchip Technology Inc. DS21662F-page 1TC2014/2015/2185 Notice: Stresses above those listed underAbsolute 1.0 ELECTRICAL Maximum Rating may cause permanent damage to CHARACTERISTICS the device. These are stress ratings only and functional operation of the device at these or any other conditions Absolute Maximum Ratings above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Input Voltage ................................................................... 7.0V Maximum Rating conditions for extended periods may Output Voltage ....................................... ( 0.3) to (V + 0.3) IN affect device reliability. Operating Temperature ......................... 40C < T < 125C J Storage Temperature.................................. 65C to +150C Maximum Voltage on Any Pin ................ V +0.3V to 0.3V IN Maximum Junction Temperature.................................. 150C ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise specified, V = V + 1V, I = 100 A, C = 3.3 F, SHDN > V , T = +25C. IN R L OUT IH A BOLDFACE type specifications apply for junction temperature of -40C to +125C. Parameters Sym Min Typ Max Units Conditions Input Operating Voltage V 2.7 6.0 V Note 1 IN Maximum Output I 50 mA TC2014 OUTMAX Current 100 TC2015 150 TC2185 Output Voltage V V 2.0% V 0.4% V + 2.0% V Note 2 OUT R R R V Temperature TCV 20 ppm/C Note 3 OUT OUT Coefficient 40 Line Regulation V / V 0.05 0.5 %(V + 1V) < V < 6V OUT IN R IN Load Regulation V /V -1.0 0.33 +1.0 % TC2014 TC2015:I = 0.1 mA to I OUT OUT L OUTMAX (Note 4) -2.0 0.43 +2.0 TC2185:I = 0.1 mA to I (Note 4) L OUTMAX Dropout Voltage V V 2 mV Note 5 I = 100 A IN OUT L 45 70 I = 50 mA L 90 140 TC2015 TC2185 I = 100 mA L 140 210 TC2185 I = 150 mA L Supply Current I 55 80 A SHDN = V , I = 0 IN IH L Shutdown Supply I 0.05 0.5 ASHDN = 0V INSD Current Power Supply PSRR 55 dB F 1 kHz, Cbypass = 0.01 F Rejection Ratio Output Short Circuit I 160 300 mA V = 0V OUTSC OUT Current Note 1: The minimum V has to meet two conditions: V = 2.7V and V = V + V . IN IN IN R DROPOUT 2: V is the regulator output voltage setting. For example: V = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V. R R 3: 6 V V 10 OUTMAX OUTMIN TCV = ---------------------------------------------------------------------------- OUT V T OUT 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal Regulation specification. 5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to I at V = 6V for T = 10 ms. MAX IN 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. T , T , ). A J JA 8: Time required for V to reach 95% of V (output voltage setting), after V is switched from 0 to V . OUT R SHDN IN DS21662F-page 2 2001-2012 Microchip Technology Inc.