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LLXX55550066
LX5506
InGaP HBT 4.5 6GHz Power Amplifier
TM
PRODUCTION DATA SHEET
DESCRIPTION KEY FEATURES
Advanced InGaP HBT
The LX5506 is a power amplifier For OFDM operation (64QAM,
Single-Polarity 3.3V Supply
designed for the FCC Unlicensed 54Mbps), the PA provides +18dBm
EVM ~ 3% at Pout=18dBm for
National Information Infrastructure linear output power with a very low
64QAM/ 54Mbps OFDM
(U-NII) band, HyperLAN2 and Japan EVM (Error-Vector Magnitude) of
P1dB ~ +26dBm
WLAN applications in the 4.9-5.95 3%, and consumes about 190mA total
Power Gain ~ 23dB at
GHz frequency range. The PA is DC current. At higher supply voltage
5.25GHz for Icq ~100mA
implemented as a three-stage of 5V, the same device provides
Power Gain ~ 21dB at
monolithic microwave integrated +24dBm linear OFDM output power
5.85GHz for Icq ~100mA
circuit (MMIC) with active bias and with 5% EVM.
Total Current ~190mA at
Pout=18dBm at 5.25GHz
complete on-chip input matching. The The LX5506 is available in a 16-pin
ACPR ~ -50dBc at 30MHz
device is manufactured with an 3mmx3mm micro-lead package (MLP).
Offset at Pout=18dBm
InGaP/GaAs Heterojunction Bipolar The compact footprint, low profile, and
Complete On-Chip Input Match
Transistor (HBT) IC process excellent thermal capability of the MLP
Simple Output Capacitor Match
(MOCVD). It operates at a single package makes the LX5506 an ideal
Small Footprint: 3x3mm2
positive voltage supply of 3.3V solution for broadband, high-gain
Low Profile: 0.9mm
(nominal), with +26dBm of P1dB and power amplifier requirements for IEEE
up to 23dB power gain in the 5.15 - 802.11a, and HiperLAN2 portable
APPLICATIONS
5.85GHz frequency range with a WLAN applications.
simple output matching capacitor pair.
FCC U-NII Wireless
IEEE 802.11a
IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM
PACKAGE DATA
PACKAGE DATA
VC1 VB1
VC2 VB2
VC3 VB3
N.C.
N.C.
LX5506
InGaP HBT 4.5 6GHz Power Amplifier
TM
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................600mA
Total Power Dissipation....................................................................................3W
13 14 15 16
RF Input Power.........................................................................................+15dBm 12 1
N.C. N.C.
*
Maximum Junction Temperature (T max) .................................................. 150C 11 2
RF OUT RF IN
J
10 3
Operation Ambient Temperature .......................................................-40 to +85C RF OUT RF IN
4
9
Storage Temperature........................................................................-65 to +150C N.C. VCC
8 7 6 5
Peak Package Solder Reflow Temperature (40 second max. exposure)........ 260C (+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
* Pad is Ground
LQ PACKAGE
(Bottom View)
RoHS / Pb-free 100% Matte Tin Lead Finish
FUNCTIONAL PIN DESCRIPTION
Name Description
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first
RF IN
stage.
VCC Supply voltage for the bias reference and control circuits.
VB1 Bias current control voltage for the first stage.
VB2 Bias current control voltage for the second stage.
VB3 Bias current control voltage for the third stage.
RF OUT RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor.
VC1 Power supply for the first stage amplifier.
VC2 Power supply for the second stage amplifier.
VC3 Power supply for the third stage amplifier.
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
GND
amplifier.
These are unused pins and not connected to the device. They can be treated either as open pins or connected
N.C.
to ground for better heat dissipation.
Copyright 2003
Microsemi
Page 2
Rev. 1.2c, 2005-08-18
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570