www.MICROSEMI.com GC4210-GC4275 GC4210-GC4275 GC4210 GC4275 CONTROL DEVICES HIGH SPEED PIN DIODES TM RoHS Compliant DESCRIPTION KEY FEATURES The GC4200 series are high speed (cathode base) PIN diodes Available as packaged devices or made with high resistivity epitaxial silicon material. These diodes as chips for hybrid applications are passivated with silicon dioxide for high stability and reliability Low Loss and have been proven by thousands of device hours in high reliability systems. Suitable for application to 18Ghz High Speed These devices can withstand storage temperatures from -65C to +200C and will operate over the range from -55C to +150C. All Low Insertion Loss devices meet or exceed military environmental specifications of High Isolation MIL-PRF-19500. The GC4200 series will operate with as little as 1 RoHS Compliant +10 mA forward bias. This series of diodes meets RoHS requirements per EU Directive 1 2002/95/EC. The standard terminal finish is gold unless otherwise Most of our devices are supplied with specified. Consult the factory if you have special requirements. Gold plated terminations. Other terminal finishes are available on request. Consult B2APPLICATIONS factory for details. The GC4200 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include high speed switches (ECM systems), TR switches, channel or antenna selection switches APPLICATIONS/BENEFITS (telecommunications), duplexers (radar) and digital phase shifters RF / Microwave Switching (phased arrays). Duplexers The GC4200 series are also used as passive and active limiters for Digital Phase Shifting low to moderate RF power levels. Phase Array Radar Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenuators. ABSOLUTE MAXIMUM RATINGS AT 25 C 3B(UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Maximum Leakage Current I 0.5 uA R 80% of Minimum Rated V B Storage Temperature T -65 to +200 C STG Operating Temperature T -55 to +150 C OP IMPORTANT: For the most current data, consult MICROSEMIs website: Uwww.H MICROSEMI.comUH Specifications are subject to change, consult factory for the latest information. These devices are ESD sensitive and must be handled use using ESD precautions. Microsemi Page 1 Copyright 2006 Microwave Products Rev.: 2009-02-19 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 www.MICROSEMI.com E ELLEECCTTRRIICCAALLSS GC4210 GC4275 CONTROL DEVICES HIGH SPEED PIN DIODES TM RoHS Compliant DEVICE ELECTRICAL PARAMETERS 25 C (unless otherwise specified)E . Thermal 2 3 1 V (V) C (pF) R ( ) T (nS) Resistance b j s L Model Number I =10 A V =10V 20 mA I =6mA/I =10mA (C/W) R R R F (Min) (Max) (Max) (Typ) (Max) GC4270 70 0.06 1.5 100 80 GC4271 70 0.10 1.0 100 70 GC4272 70 0.20 0.8 100 70 GC4273 70 0.30 0.7 100 60 GC4274 70 0.40 0.6 100 50 GC4275 70 0.50 0.5 100 40 GC4210 100 0.06 1.5 200 80 GC4211 100 0.10 1.0 200 70 GC4212 100 0.20 0.75 200 70 GC4213 100 0.30 0.6 200 60 GC4214 100 0.40 0.5 200 50 GC4215 100 0.50 0.35 200 40 GC4220 250 0.06 2.5 500 80 GC4221 250 0.10 2.0 500 70 GC4222 250 0.20 1.5 500 70 GC4223 250 0.30 1.0 500 60 GC4224 250 0.40 0.8 500 50 GC4225 250 0.50 0.6 500 40 Notes: 1. This series of devices is available in standard case styles 00, 30, and 35. Many other styles are available on request. 2. Capacitance is measured at 1 MHz. 3. Resistance is measured AT 1 GHz using transmission loss techniques. The junction capacitance specified is for a 00 (chip) package style. Standard wafer evaluation and characterization is completed using a style 30 package. Diodes are available in many case styles. Each type offers performance trade-offs. The proper choice of package style depends on the end application and operating environment. Consult factory for assistance. Reverse polarity diodes (NIP) and higher voltage PIN and NIP diodes are also available. (See data sheets for GC4300, GC4400, and GC4500 series respectively.) Microsemi Page 2 Copyright 2006 Microwave Products Rev.: 2009-02-19 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748