Product Information

AT24C16C-XHM-T

AT24C16C-XHM-T electronic component of Microchip

Datasheet
EEPROM SERIAL EEPROM 16K (2K X 8) 2-WIRE 1.7V

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5211 ea
Line Total: USD 0.52

3983 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4838 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

AT24C16C-XHM-T
Microchip

1 : USD 0.4286
10 : USD 0.4217
25 : USD 0.415
100 : USD 0.4082
250 : USD 0.4013
500 : USD 0.3932
1000 : USD 0.3932
3000 : USD 0.3932

3969 - WHS 2


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

AT24C16C-XHM-T
Microchip

1 : USD 0.5211
10 : USD 0.3774
30 : USD 0.3005
100 : USD 0.2591
500 : USD 0.2414
1000 : USD 0.2295

4850 - WHS 3


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 5000
Multiples : 5000

Stock Image

AT24C16C-XHM-T
Microchip

5000 : USD 0.3335

     
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The AT24C16C-XHM-T with EEPROM SERIAL EEPROM manufactured by Microchip is a 16K (2K X 8) non-volatile memory device. This device is a two-wire memory with low voltage operation (1.7 V) and is based on the two-wire serial interface. It is ideal for portable and battery-operated applications like PC Card applications, cell phones, handheld and device data storage. The AT24C16C-XHM-T is functional in three states: write, read and erase. It provides 16384 bits of memory organized as 2048 bytes of 8 bits each. Its write cycle time is 6 ms (typical). It also features a user-programmable write protection scheme with eight bits of protected address space, enabling the user to set parameters for data security. The device is optimized for low power consumption and high endurance having a data retention of up to 10 years. The AT24C16C-XHM-T device also has restrictions on the data write cycles, as well as the maximum endurance which is up to 10 million cycles.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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