APTMC170AM30CT1AG

APTMC170AM30CT1AG V = 1700V DSS Phase leg R = 35m max Tj = 25C DSon SiC MOSFET Power Module I = 100A Tc = 25C D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET - High speed switching - Low R DS(on) - Ultra low loss SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Very low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Pins 1/2 3/4 5/6 must be shorted together RoHS Compliant All ratings T = 25C unless otherwise specified j Absolute maximum ratings (per SiC MOSFET) Symbol Parameter Max ratings Unit V Drain - Source Voltage 1700 V DSS T = 25C 100 c I Continuous Drain Current D T = 80C 74 A c I Pulsed Drain current 200 DM V Gate - Source Voltage -10/25 GS V V Gate - Source Voltage recommended operation values -5/20 GSOP R Drain - Source ON Resistance 35 m DSon P Power Dissipation T = 25C 700 W D c These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1-7 www.microsemi.com APTMC170AM30CT1AG Rev 1 December, 2016 APTMC170AM30CT1AG Electrical Characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Drain Current V = 0V , V = 1700V 200 A DSS GS DS T = 25C 22.5 35 V = 20V j GS R Drain Source on Resistance m DS(on) I = 100A T = 150C 45 D j V Gate Threshold Voltage V = V , I = 36mA 2 2.4 4 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 1.2 A GSS GS DS Dynamic Characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 7344 iss V = 0V GS C Output Capacitance V = 1000V 342 pF oss DS f = 1MHz C Reverse Transfer Capacitance 14 rss Q Total gate Charge 380 g V = -5/+20V GS Q Gate Source Charge 74 V = 900V nC gs Bus I = 100A D Q Gate Drain Charge 140 gd T Turn-on Delay Time 105 d(on) V = -5/+20V GS T Rise Time 75 r V = 900V Bus ns I =100A T Turn-off Delay Time D 210 d(off) R = 10 Gext T Fall Time 55 f Inductive Switching E Turn on Energy T = 150C 4.4 on V = -5/+20V j GS V = 900V mJ Bus I = 100A D E Turn off Energy T = 150C 3 off j R = 10 Gext R Internal gate resistance 3.15 Gint R Junction to Case Thermal Resistance 0.18 C/W thJC Body diode ratings and characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C 4.1 V = -5V j GS V Diode Forward Voltage V SD I = 50A SD T = 150C 3.6 j t Reverse Recovery Time 70 ns rr I = 100A V = -5V SD GS Q Reverse Recovery Charge 1 C rr V = 900V di /dt = 2800A/s R F I Reverse Recovery Current 28 A rr 2-7 www.microsemi.com APTMC170AM30CT1AG Rev 1 December, 2016