The 2N2329 is a low-power, NPN, Silicon, juntion-gate field-effect transistor (JFET) manufactured by Microchip Technology Inc. It has a maximum power dissipation rating of 500mW and a maximum drain current rating of 500mA. The 2N2329 has a low gate-source capacitance of 1.5 pF and maximum voltage rating of 20V. It is designed to be used in audio amplifiers, computer circuitry, and automotive applications.