Product Information

25LC080C-I/MS

25LC080C-I/MS electronic component of Microchip

Datasheet
Memory; EEPROM; SPI; 1024x8bit; 1.8÷5.5V; 10MHz; MSOP8

Manufacturer: Microchip
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Price (USD)

1: USD 0.7486 ea
Line Total: USD 0.75

485 - Global Stock
Ships to you between
Tue. 21 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
485 - WHS 1


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

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25LC080C-I/MS
Microchip

1 : USD 0.7486
25 : USD 0.7475
100 : USD 0.736

     
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25AA080C/D, 25LC080C/D 8K SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25LC080C 2.5-5.5V 16 Byte I, E P, SN, ST, MS, MN 25AA080C 1.8-5.5V 16 Byte I P, SN, ST, MS, MN 25LC080D 2.5-5.5V 32 Byte I, E P, SN, ST, MS, MN 25AA080D 1.8-5.5V 32 Byte I P, SN, ST, MS, MN Features: Description: Max. Clock 10 MHz The Microchip Technology Inc. 25AA080C/D, * 25LC080C/D (25XX080C/D ) are 8 Kbit Serial Electri- Low-Power CMOS Technology: cally Erasable PROMs. The memory is accessed via a - Max. write current: 5 mA at 5.5V simple Serial Peripheral Interface (SPI) compatible - Read current: 5 mA at 5.5V, 10 MHz serial bus. The bus signals required are a clock input - Standby current: 5 A at 5.5V (SCK) plus separate data in (SI) and data out (SO) 1024 x 8-bit Organization lines. Access to the device is controlled through a Chip Select (CS) input. 16 Byte Page (C version devices) 32 Byte Page (D version devices) Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transi- Self-Timed Erase and Write Cycles (5 ms max.) tions on its inputs will be ignored, with the exception of Block Write Protection: Chip Select, allowing the host to service higher priority - Protect none, 1/4, 1/2 or all of array interrupts. Built-In Write Protection: The 25XX080C/D is available in standard packages - Power-on/off data protection circuitry including 8-lead PDIP and SOIC, and advanced pack- - Write enable latch aging including 8-lead MSOP, TSSOP, and 2x3 TDFN. - Write-protect pin All packages are Pb-free and RoHS compliant. Sequential Read High Reliability: Package Types (not to scale) - Endurance: > 1M erase/write cycles TSSOP/MSOP PDIP/SOIC - Data retention: > 200 years (ST, MS) (P, SN) - ESD protection: > 4000V 1 8 CS VCC CS 1 8 VCC Pb-Free and RoHS Compliant 2 7 SO HOLD SO 2 7 HOLD 3 6 WP SCK Temperature Ranges Supported: 5 4 VSS SI WP 3 6 SCK - Industrial (I): -40Cto +85 C VSS 4 5 SI - Automotive (E): -40C to +125C TDFN (MN) 1 CS 8 VCC 2 SO 7 HOLD 3 WP 6 SCK 4 VSS 5 SI *25XX080C/D is used in this document as a generic part number for the 25AA080C/D, 25LC080C/D. 2009-2012 Microchip Technology Inc. DS22151B-page 125XX080C/D 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 1.8V to 5.5V DC CHARACTERISTICS Automotive (E): TA = -40C to +125C VCC = 2.5V to 5.5V Param. Sym. Characteristic Min. Max. Units Test Conditions No. D001 VIH1 High-level input 0.7 VCC VCC+1 V voltage D002 VIL1 Low-level input -0.3 0.3 VCC VVCC 2.7V voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V D004 VOL1 Low-level output 0.4 VIOL = 2.1 mA voltage D005 VOL2 0.2 VIOL = 1.0 mA, VCC < 2.5V D006 VOH High-level output VCC-0.5 V IOH = -400 A voltage D007 ILI Input leakage current 1 ACS = VCC, VIN = VSS OR VCC D008 ILO Output leakage 1 ACS = VCC, VOUT = VSS OR VCC current D009 CINT Internal Capacitance 7 pFTA = 25C, CLK = 1.0 MHz, (all inputs and VCC = 5.0V (Note) outputs) D010 ICC Read 5 mA VCC = 5.5V FCLK = 10.0 MHz SO = Open Operating Current 2.5 mA VCC = 2.5V FCLK = 5.0 MHz SO = Open D011 ICC Write 5 mA VCC = 5.5V 3 mA VCC = 2.5V D012 Iccs 5 A CS = VCC = 5.5V, Inputs tied to VCC or Standby Current VSS, TA = +125C 1 A CS = VCC = 5.5V, Inputs tied to VCC or VSS, TA = +85C Note: This parameter is periodically sampled and not 100% tested. DS22151B-page 2 2009-2012 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
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