Product Information

25AA020AT-I/ST

25AA020AT-I/ST electronic component of Microchip

Datasheet
EEPROM 2K 256X8 1.8V SER EE IND

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.5861 ea
Line Total: USD 1465.25

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 2500
Multiples : 2500

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25AA020AT-I/ST
Microchip

2500 : USD 0.7337
5000 : USD 0.727
10000 : USD 0.7201
15000 : USD 0.7133
20000 : USD 0.7064
25000 : USD 0.6996
30000 : USD 0.6928
50000 : USD 0.6858
100000 : USD 0.6789

0 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

25AA020AT-I/ST
Microchip

1 : USD 0.6181
25 : USD 0.6075
100 : USD 0.5861

     
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25AA020A/25LC020A 2K SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25AA020A 1.8-5.5V 16 Bytes I P, MS, SN, ST, MC, OT 25LC020A 2.5-5.5V 16 Bytes I, E P, MS, SN, ST, MC, OT Features: Description: 10 MHz max. clock frequency The Microchip Technology Inc. 25XX020A* is a 2 Kbit Serial Electrically Erasable Programmable Read-Only Low-power CMOS technology: Memory (EEPROM). The memory is accessed via a - Max. Write Current: 5 mA at 5.5V, 10 MHz simple Serial Peripheral Interface (SPI) compatible - Read Current: 5 mA at 5.5V, 10 MHz serial bus. The bus signals required are a clock input - Standby Current: 5 A at 5.5V (SCK) plus separate data in (SI) and data out (SO) 256 x 8-bit organization lines. Access to the device is controlled through a Chip ) input. Select (CS Write Page mode (up to 16 bytes) Sequential Read Communication to the device can be paused via the Self-timed Erase and Write cycles (5 ms max.) hold pin (HOLD). While the device is paused, transi- tions on its inputs will be ignored, with the exception of Block Write protection: Chip Select, allowing the host to service higher priority - Protect none, 1/4, 1/2 or all of array interrupts. Built-in Write protection: The 25XX020A is available in standard packages - Power-on/off data protection circuitry including 8-lead PDIP and SOIC, and advanced - Write enable latch packages including 8-lead MSOP, 8-lead TSSOP and - Write-protect pin rotated TSSOP, 8-lead 2x3 DFN, and 6-lead SOT-23. High reliability: Package Types (not to scale) - Endurance: 1,000,000 Erase/Write cycles TSSOP/MSOP PDIP/SOIC - Data retention: > 200 years (P, SN) (ST, MS) - ESD protection: > 4000V CS 1 8 VCC 1 8 CS VCC Temperature ranges supported: SO 2 7 HOLD 2 7 SO HOLD 3 6 - Industrial (I): -40Cto +85C WP SCK WP 3 6 SCK 5 4 VSS SI - Automotive (E): -40Cto +125C VSS 4 5 SI Pb-Free packages available DFN SOT-23 (MC) Pin Function Table (OT) VCC 1 6 CS 1 8 SCK VDD Name Function 2 2 5 SO 7 HOLD VSS CS CS Chip Select Input 3 4 3 6 SCK SI SO WP VSS 4 5 SI SO Serial Data Output WP Write-Protect X-Rotated TSSOP VSS Ground (X/ST) SI Serial Data Input 1 8 HOLD SCK 2 7 VCC SI 3 6 SCK Serial Clock Input CS VSS 5 4 SO WP HOLD Hold Input VCC Supply Voltage *25XX020A is used in this document as a generic part number for the 25AA020A and the 25LC020A. 2006 Microchip Technology Inc. Preliminary DS21833C-page 125AA020A/25LC020A 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 1.8V to 5.5V DC CHARACTERISTICS Automotive (E): TA = -40C to +125C VCC = 2.5V to 5.5V Param. Sym. Characteristic Min. Max. Units Test Conditions No. D001 VIH1 High-level Input 0.7 VCC VCC +1 V Voltage D002 VIL1 Low-level Input -0.3 0.3 VCC VVCC 2.7V (Note 1) Voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V (Note 1) D004 VOL Low-level Output 0.4 VIOL = 2.1 mA Voltage D005 VOL 0.2 VIOL = 1.0 mA, VCC < 2.5V D006 VOH High-level Output VCC -0.5 V IOH = -400 A Voltage D007 ILI Input Leakage 1 ACS = VCC, VIN = VSS TO VCC Current D008 ILO Output Leakage 1 ACS = VCC, VOUT = VSS TO VCC Current D009 CINT Internal Capacitance 7 pFTA = 25C, CLK = 1.0 MHz, (all inputs and VCC = 5.0V (Note 1) outputs) D010 ICC Read 5 mA VCC = 5.5V FCLK = 10.0 MHz SO = Open Operating Current 2.5 mA VCC = 2.5V FCLK = 5.0 MHz SO = Open D011 ICC Write 5 mA VCC = 5.5V 3 mA VCC = 2.5V D012 ICCS 5 A CS = VCC = 5.5V, Inputs tied to VCC or Standby Current VSS, TA = +125C 1 A CS = VCC = 2.5V, Inputs tied to VCC or VSS, TA = +85C Note: This parameter is periodically sampled and not 100% tested. DS21833C-page 2 Preliminary 2006 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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