Product Information

24LC08BT-I/MNY

24LC08BT-I/MNY electronic component of Microchip

Datasheet
EEPROM 8K 1K X 8 2.5V SERIAL EE IND

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0697 ea
Line Total: USD 1.07

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 3300
Multiples : 3300

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24LC08BT-I/MNY
Microchip

3300 : USD 0.4165

     
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RoHS - XON
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Supply Voltage - Max
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24AA08/24LC08B/24FC08 2 8K I C Serial EEPROM Device Selection Table Part Number VCC Range Max. Clock Frequency Temp. Ranges Available Packages (1) 24AA08 1.7V-5.5V 400 kHz I MC, MS, P, SN, OT, MNY, ST 24LC08B 2.5V-5.5V 400 kHz I, E MC, MS, P, SN, OT, MNY, ST 24FC08 1.7V-5.5V 1 MHz I, E MS, P, SN, OT, ST, Q4B, Q6B Note 1: 100 kHz for VCC<2.5V. Features Description (1) Single Supply with Operation down to 1.7V for The Microchip Technology Inc. 24XX08 is an 8-Kbit 24AA08 and 24FC08 Devices, 2.5V for 24LC08B Electrically Erasable PROM (EEPROM). The device is Devices organized as four blocks of 256 x 8-bit memory with a two-wire serial interface. Its low-voltage design permits Low-Power CMOS Technology: operation down to 1.7V with standby and active - Read current 1 mA, maximum currents of only 1A and 1mA, respectively. The - Standby current 1 A, maximum (I-temp.) 24XX08 also has a page write capability for up to 2 Two-Wire Serial Interface, I C Compatible 16 bytes of data. Schmitt Trigger Inputs for Noise Suppression Note 1: 24XX08 is used in this document as a Output Slope Control to Eliminate Ground Bounce generic part number for the 100 kHz, 400 kHz and 1 MHz Compatibility 24AA08/24LC08B/24FC08 devices. Page Write Time: 5 ms, Maximum Self-Timed Erase/Write Cycle Package Types 16-Byte Page Write Buffer DFN/TDFN/UDFN PDIP/MSOP Hardware Write-Protect (Top view) (Top view) ESD Protection >4,000V (1) (1) A0 11 88 VCC 1 8 VCC A0 More than 1 Million Erase/Write Cycles (1) (1) A1 22 77 WP 2 7 WP A1 Data Retention >200 Years (1) (1) 33 66 SCL 3 6 SCL A2 A2 Factory Programming Available VSS 4 5 SDA VSS 44 55 SDA RoHS Compliant Temperature Ranges: SOIC/TSSOP SOT-23 - Industrial (I): -40C to +85C (Top view) (Top view) (1) - Extended (E): -40C to +125C 1 8 A0 VCC SCL 1 5 WP (1) Automotive AEC-Q100 Qualified A1 2 7 WP VSS 2 (1) 3 6 A2 SCL 3 4 SDA VCC 4 5 VSS SDA Packages 8-Lead DFN, 8-Lead MSOP, 8-Lead PDIP, 8-Lead Note 1: Pins A0, A1 and A2 are not used by the SOIC, 5-Lead SOT-23, 8-Lead TDFN, 8-Lead 24XX08 (no internal connections). TSSOP, 8-Lead UDFN and 8-Lead Wettable Flanks UDFN 2002-2021 Microchip Technology Inc. DS20001710N-page 124AA08/24LC08B/24FC08 Block Diagram WP HV Generator I/O Memory EEPROM Control Control XDEC Array Logic Logic Page Latches I/O SCL YDEC SDA VCC Sense Amp. VSS R/W Control DS20001710N-page 2 2002-2021 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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