Product Information

24C01C/P

24C01C/P electronic component of Microchip

Datasheet
EEPROM 128x8
Serial EEPROM IC supporting 1Kbit, 2-wire bus interface, low-voltage operation.

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4058 ea
Line Total: USD 0.41

5 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

24C01C/P
Microchip

1 : USD 0.4058
125 : USD 0.3988
250 : USD 0.3917
500 : USD 0.3847
1000 : USD 0.3777

643 - WHS 2


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

24C01C/P
Microchip

1 : USD 0.468
25 : USD 0.452
120 : USD 0.4416

     
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The 24C01C/P is an 8K bit Electrically Erasable Programmable Read-Only Memory (EEPROM) device from Microchip. It offers: a high performance, low-power CMOS technology, larger capacity than most EEPROMs available in the industry, two-wire serial interface, self-timed Write cycle, low-voltage programming, compliant to industry standard timing, and current limited interface protection. The device provides an ideal non-volatile memory solution to a vast range of applications such as computers, office machines, personalised door, lights, unlocks, and other security applications. The device possesses wide operating voltage range of 2.5 to 5.5 volts. Furthermore, it is pins and function compatible with 23C01C/P, 2K bit EEPROM device from the same series. The device is offered in a 8-pin PDIP, 8-pin SOIC, 8-pin TSSOP and 6-pin SOT-23 packages to fit in any workable space. The 24C01C/P is designed and validated for extended temperature operation from -40°C to +85°C for maximum rugged and reliability. Furthermore, it offers high endurance of one million write cycles and data retention of up to 200 years. The device offers block write protection memory which prevents accidental write and overwrite of memory, while allowing data removal and re-programming of the EEPROM in blocks. This feature minimizes the Write cycle timing and reduces power dissipation while protecting the memory.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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