Product Information

1N6463

1N6463 electronic component of Microchip

Datasheet
Diode TVS Single Uni-Dir 12V 500W 2-Pin Case E

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.162 ea
Line Total: USD 9.16

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

1N6463
Microchip

1 : USD 9.5386
10 : USD 8.5747
100 : USD 7.8748
250 : USD 7.7173

0 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

1N6463
Microchip

1 : USD 10.6904
100 : USD 10.6904

0 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

1N6463
Microchip

1 : USD 9.162
10 : USD 8.2362
100 : USD 7.5639
250 : USD 7.4127

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Packaging
Brand
Mounting Style
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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1N6461 1N6468 Qualified Levels: Voidless Hermetically Sealed Unidirectional JAN, JANTX, and Available on Transient Voltage Suppressors JANTXV commercial versions Qualified per MIL-PRF-19500/551 DESCRIPTION This series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. Working peak standoff voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical bonds. These devices are also available in a surface mount MELF package configuration. Important: For the latest information, visit our website 1N6461 1N6468 MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available for commercial grade only. MARKING: Body paint and part number. POLARITY: Cathode band. TAPE & REEL option: Standard per EIA-296. Contact factory for quantities. WEIGHT: Approximately 750 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6461 e3 Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant CDS (reference JANS) Blank = commercial JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Symbol Definition Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in V(BR) temperature expressed in %/C or mV/C. V Breakdown Voltage: The voltage across the device at a specified current I in the breakdown region. (BR) (BR) Rated working standoff voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage V WM that may be continuously applied over the standard operating temperature. I Standby Current: The current through the device at rated stand-off voltage. D Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse I current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an PP external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an V C impulse current (I ) for a specified waveform. PP Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The P PP impulse power is the maximum-rated value of the product of I and V . PP C T4-LDS-0286, Rev. 1 (4/24/13) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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