Product Information

1N5552USTR

1N5552USTR electronic component of Microchip

Datasheet
Diode Switching 600V 5A 2-Pin B-MELF T/R

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 11.3493 ea
Line Total: USD 79.45

0 - Global Stock
MOQ: 7  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 7
Multiples : 1

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1N5552USTR
Microchip

7 : USD 11.3493

     
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RoHS - XON
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1N5550US thru 1N5554US Qualified Levels: VOIDLESS HERMETICALLY SEALED SURFACE JAN, JANTX, JANTXV Available on MOUNT STANDARD RECOVERY GLASS RECTIFIERS and JANS commercial versions Qualified to MIL-PRF-19500/420 DESCRIPTION This standard recovery surface mount rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 5.0 amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal Category 1 metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speeds. B SQ-MELF (D-5B) Important: For the latest information, visit our website 1N5550US thru 1N5554US MAXIMUM RATINGS Notes: 1. Derate linearly at 66.6 mA/C above T = 100 C. An I of up to 6 Amps is allowable provided that appropriate heat sinking or forced air EC O o cooling maintains the junction temperature at or below +200 C. o 2. Derate linearly at 22.2 mA/C from +55 C to +100 C. 3. These I ratings are for a thermally (PC boards or other) mounting methods where the lead or end-cap temperatures cannot be maintained O o and where thermal resistance from mounting point to ambient is still sufficiently controlled where T does not exceed 175 C. This J(MAX) equates to R 47 C/W. JX 4. Derate linearly at 26.7 mA/C above T = +100 C to +175 C ambient. A MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: End caps are copper with tin/lead (Sn/Pb) finish. RoHS compliant matte-tin is available for commercial only. MARKING: Cathode band only. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities. WEIGHT: 539 milligrams. See Package Dimensions and recommended Pad Layout on last page. PART NOMENCLATURE JAN 1N5550 US (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS Level Blank = Commercial MELF Package JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range V RWM excluding all transient voltages (ref JESD282-B). Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave I O input and a 180 degree conduction angle. V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and I R temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from t rr the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. T4-LDS-0230-1, Rev. 1 (111901) 2011 Microsemi Corporation Page 2 of 5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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