Buffer Amplifier, GaAs MMIC 4 - 11 GHz XB1007-QT Rev. V2 Features Functional Schematic Excellent Transmit LO/Output Buffer Stage GND GND GND V D 23 dB Small Signal Gain 19 dBm P1dB Compression Point 1 1 1 1 6 5 4 3 4.5 dB Noise Figure Variable Gain with Adjustable Bias 100% RF, DC and Output Power Testing GND 1 12 GND Lead-Free 3 mm, 16-lead QFN RoHS* Compliant RF 2 11 IN RF OUT Applications 3 10 GND GND Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT GND GND 4 9 Description The XB1007-QT is a two stage 4 - 11 GHz GaAs 5 6 7 8 MMIC buffer amplifier. The device is assembled in a lead-free 3 mm QFN surface mount package offering V GND GND GND G excellent RF and thermal properties. This amplifier has a small signal gain of 23 dB with a 20 dBm P1dB output compression point. The device also 3 provides variable gain regulation with adjustable Pin Configuration bias. The device is ideally suited as an LO or RF buffer stage with broadband performance. 1,3,4,6,7,8,9,10,12,14,15,16 GND 1,2 Ordering Information 2 RF IN 5 VG XB1007-QT-0G00 Bulk Packaging 11 RF OUT XB1007-QT-0G0T Tape & Reel 13 VD 4 XB1007-QT-EV1 Sample Board 17 Paddle 1. Reference Application Note M513 for reel size information. 3. MACOM recommends connecting unused package pins to 2. All sample boards include 5 loose parts. ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Buffer Amplifier, GaAs MMIC 4 - 11 GHz XB1007-QT Rev. V2 Electrical Specifications: Freq. = 4 - 11 GHz, T = +25C, V = 4 V, Z = 50 A D 0 Small Signal Gain dB 23 Input Return Loss dB 20 Output Return Loss dB 12 Gain Flatness dB +/- 1.5 Reverse Isolation dB 50 Noise Figure dB 4.5 P1dB dBm 19 Saturated Output Power dBm 21 Output IP3 dBm 31 Drain Bias Voltage V 4 Gate Bias Voltage V -1.0 -0.35 -0.1 Supply Current (V = 4 V, V = -0.5 V) mA 100 130 D G 5,6 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid damage: Input Power 20 dBm Static Sensitivity Drain Voltage 4.3 V Gallium Arsenide Integrated Circuits are sensitive to Gate Voltage 0 V electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques 7 Junction Temperature +150C should be used when handling these HBM class 1A devices. Operating Temperature -40C to +85C Storage Temperature -65C to +165C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Operating at nominal conditions with T +150C will ensure J 6 MTTF > 1 x 10 hours. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: