6 GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 Functional Schematic Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications 1 8 Tunable from DC - 6 GHz N/C N/C 28 V Operation 14.8 dB Gain 2.5 GHz RF / V 2 IN G 7 RF / V OUT D 57 % Drain Efficiency 2.5 GHz 100 % RF Tested RF / V IN G 3 6 RF / V OUT D Industry standard SOIC plastic package RoHS* Compliant 9 4 N/C N/C 5 Paddle Applications Defense Communications Land Mobile Radio Pin Configuration Avionics Wireless Infrastructure ISM 1, 4, 5, 8 N/C No Connection VHF/UHF/L/S-Band Radar 2, 3 RF / V RF Input / Gate Description IN G The NPTB00004A GaN HEMT is a power transistor 6, 7 RF / V RF Output / Drain OUT D optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with 1 9 Paddle Ground / Source output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package. 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. Ordering Information Part Number Package NPTB00004A bulk quantity NPTB00004A-SMB sample board * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: GaN Power Transistor, 28 V, 5 W DC - 6 GHz NPTB00004A Rev. V2 RF Electrical Specifications: T = 25C, V = 28 V, I = 50 mA C DS DQ Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 2.5 GHz G - 16 - dB SS Saturated Output Power CW, 2.5 GHz P - 37.1 - dBm SAT Drain Efficiency at Saturation CW, 2.5 GHz - 63.7 - % SAT Power Gain 2.5 GHz, P = 4 W G 12.8 14.8 - dB OUT P Drain Efficiency 2.5 GHz, P = 4 W 45 57 - % OUT Ruggedness: Output Mismatch All phase angles VSWR = 15:1, No Device Damage DC Electrical Characteristics: T = 25C C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V = -8 V, V = 100 V I - - 2 mA GS DS DLK Gate-Source Leakage Current V = -8 V, V = 0 V I - - 1 mA GS DS GLK Gate Threshold Voltage V = 28 V, I = 2 mA V -2.5 -1.6 -0.5 V DS D T Gate Quiescent Voltage V = 28 V, I = 50 mA V -2.1 -1.3 -0.3 V DS D GSQ On Resistance V = 2 V, I = 15 mA R - 1.6 - DS D ON Maximum Drain Current V = 7 V pulsed, pulse width 300 s I - 1.4 - A DS D,MAX 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: