GaAs SPDT Terminated Switch DC - 2.5 GHz MASWSS0180 Rev. V3 Features Functional Schematic Very Low Power Consumption Pin 1 High Isolation: 30 dB up to 2 GHz Very High Intercept Point: 46 dBm IP 3 V2 RF2 Nanosecond Switching Speed Temperature Range: -40C to +85C RFC GND Lead-Free SOIC-8 Package RoHS* Compliant Version of SW-338 V1 GND Applications GND RF1 ISM Wireless Networking & Communication Description Pin Configuration The MASWSS0180 is a GaAs MMIC SPDT terminated switch in a lead-free SOIC 8-lead surface mount plastic package. This switch is ideally suited 1 V2 for use where very low power consumption is required. 2 RF Common Typical applications include transmit/receive 3 V1 switching, switch matrices, and filter banks in 4, 6, 7 Ground systems such as radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered 5 RF Port 1 radio equipment. 8 RF Port 2 The MASWSS0180 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability. 1,2 Ordering Information Handling Procedures Please observe the following precautions to avoid Part Number Package damage: MASWSS0180 Bulk Packaging Static Sensitivity MASWSS0180TR-3000 3000 piece reel Gallium Arsenide Integrated Circuits are sensitive to MASWSS0180SMB Sample Test Board electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques 1. Reference Application Note M513 for reel size information. should be used when handling these devices. 2. All sample boards include 5 loose parts. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: GaAs SPDT Terminated Switch DC - 2.5 GHz MASWSS0180 Rev. V3 Electrical Specifications: T = 25C, V = 0 V / -2.9 V, Z = 50 A C 0 DC - 0.5 GHz 0.55 Insertion Loss 0.5 - 1.0 GHz dB 0.60 0.7 1.0 - 2.0 GHz 0.65 DC - 0.5 GHz 50 Isolation 0.5 - 1.0 GHz dB 36 43 1.0 - 2.0 GHz 35 VSWR On/Off DC - 2.0 GHz Ratio 1.1:1 T , T 10% to 90% RF, 90% to 10 % RF ns 10 RISE FALL T , T 50% Control to 90% RF, 50% Control to 10% RF ns 20 ON OFF Transients In-Band mV 25 Input Power 50 MHz 2.9 V 15 1 dB Compression Point 1 GHz 2.9 V 16 dBm 50 MHz 5.0 V 26 1 GHz 5.0 V 27 Measured Relative to Input Power (for two-tone input power up to +5 dBm) 50 MHz 2.9 V 46 2nd Order Intercept 1 GHz 2.9 V dBm 52 50 MHz 5.0 V 63 1 GHz 5.0 V 82 Measured Relative to Input Power (for two-tone input power up to +5 dBm) 50 MHz 2.9 V 27 3rd Order Intercept 1 GHz 2.9 V dBm 27 50 MHz 5.0 V 47 1 GHz 5.0 V 50 Control Current A 15 35 V = 2.9 V C 3. Typical values represent performance at middle of frequency range noted. 4 5,6 Truth Table Absolute Maximum Ratings Parameter Absolute Maximum 27 dBm 0.05 GHz Input Power 34 dBm 0.5 - 2.0 GHz 1 0 ON OFF Control Voltage -8.5 V < V < + 5 V C 0 1 OFF ON Operating Temperature -40C to +85C 4. 0 = 0 V 0.2 V, 1 = -2.9 V to -5.0 V Storage Temperature -65C to +150C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: