MASWSS0121 SPDT High Isolation Terminated Switch Rev. V3 0.5 - 3.0 GHz Features Functional Schematic Positive Voltage Control (0 / +5 V) High Isolation: 54 dB 0.9 GHz 16 15 14 13 52 dB 1.9 GHz 50-Ohm Internal Terminations Low Insertion Loss: 0.6 dB 0.9 GHz RF2 RF1 0.7 dB 1.9 GHz 1 12 Lead-Free Package: 4 mm 16-Lead PQFN 100% Matte Tin Plating over Copper 2 11 Halogen-Free Green Mold Compound 260C Reflow Compatible 3 10 RoHS* Compliant Version of SW-475 9 4 Description V1 The M/A-COM MASWSS0121 GaAs monolithic V2 switch provides high isolation in a low-cost, lead-free plastic surface mount package. The MASWSS0121 5 6 7 8 is ideal for applications across a broad range of frequencies including synthesizer switching, transmit / receive switching, switch matrices and PIN Configuration filter banks in systems such as radio and cellular equipment, PCS, GPS, and fiber optic modules. Pin Function Description 1 RF2 RF port M/A-COM fabricates the MASWSS0121 using a 1.0- 2 GND RF ground micron gate length MESFET process. The process features full chip passivation for performance and 3 GND RF ground reliability. 4 V1 Control 1 5 V2 Control 2 6 GND RF ground 1 Ordering Information 7 RFC RF port Part Number Package 8 GND RF ground 9 GND RF ground MASWSS0121 Bulk Packaging 10 GND RF ground MASWSS0121TR 1000 piece reel 11 GND RF ground MASWSS0121TR-3000 3000 piece reel 12 RF1 RF port MASWSS0121SMB Sample board 13 GND RF ground 1. Reference Application Note M513 for reel size information. 14 GND RF ground 15 GND RF ground 16 GND RF ground 2 17 (pad) GND RF ground 2. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASWSS0121 SPDT High Isolation Terminated Switch Rev. V3 0.5 - 3.0 GHz 3 Electrical Specifications: T = 25 C, Z = 50 Ohms, V = 0, 5.0 V A 0 C Parameter Test Conditions Units Min. Typ. Max. 0.5- 1 GHz dB 0.6 0.7 Insertion Loss 1.0 - 2.0 GHz dB 0.7 0.8 2.0 - 3.0 GHz dB 0.75 0.9 0.5 - 1 GHz dB 51 54 Isolation 1.0 - 2.0 GHz dB 48 52 2.0 - 3.0 GHz dB 45 50 0.5 - 1 GHz dB 20 Return Loss 1.0 - 2.0 GHz dB 20 2.0 - 3.0 GHz dB 20 Input IP 2-Tone 900 MHz, 5 MHz spacing dBm 83 2 Input IP 2-Tone 900 MHz, 5 MHz spacing dBm 46 3 1 GHz, 5 V dBm 27 P1dB 1 GHz, 3 V dBm 18 1 GHz, 5 V dBm 24 P0.1dB 1 GHz, 3 V dBm 11 T , T 10% to 90% RF & 90% to 10% RF nS 24 RISE FALL T , T 50% of V to 10 % / 90% RF nS 15 ON OFF C Transients V = 5.0 V square wave, in-band mV 12 C Control Current Vc = 4.5 V, 0 dBm A 2 13 3. External DC blocking capacitors are required on all RF ports (47 pF capacitors are recommended). 4,5 Absolute Maximum Ratings Truth Table Parameter Absolute Maximum V1 V2 RFC - RF1 RFC - RF2 Input Power (0.5 - 3.0 GHz) 0 1 ON OFF 3 V Control +30 dBm 5 V Control +33 dBm 1 0 OFF ON Operating Voltage +8.5 volts Logic Level Voltage Level Operating Temperature -40C to +85C 0 0 V 0.2 V Storage Temperature -65C to +150C 4. Exceeding any one or combination of these limits may cause 1 3.0 V to 8.0 V permanent damage to this device. 5. M/A-COM does not recommend sustained operation near these survivability limits. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: