MAGX-000912-650L0x GaN on SiC HEMT Pulsed Power Transistor Rev. V2 650 W Peak, 960-1215 MHz, 128 s Pulse, 10% Duty Features MAGX-000912-650L00 GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation 50 V Operation 800 W performance at 20s and 6% duty factor RoHS* Compliant and 260C Reflow Compatible MTTF = 600 years (T < 200C) J Applications L-Band pulsed radar. Description The MAGX-000912-650L00 and MAGX-000912- MAGX-000912-650L0S 650L0S (MAGX-000912-650L0x) are gold metalized matched gallium nitride (GaN) on silicon carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications for the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for todays demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information Part Number Description MAGX-000912-650L00 Standard Flange MAGX-000912-650L0S Earless Flange 960 - 1215 MHz MAGX-A00912-650L00 Evaluation Board 1. When ordering the evaluation board, please indicate on sales order notes if it will be used for: A. Standard Flange devices B. Earless Flange devices * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: MAGX-000912-650L0x GaN on SiC HEMT Pulsed Power Transistor Rev. V2 650 W Peak, 960-1215 MHz, 128 s Pulse, 10% Duty Typical RF Performance: (under standard operating conditions), P = 650 W (Peak) OUT Freq P Gain I Eff. RL Droop +1dB OD VSWR-S VSWR-T IN D (MHz) (W) (dB) (A) (%) (dB) (dB) (W) (3:1) (3:1) 960 6.5 20 21 62 -8 0.3 740 S P 1030 5.2 21 20.3 64 -13 0.2 723 S P 1090 5.8 20.5 20.3 64 -11 0.3 719 S P 1150 5.7 20.6 21 62 -15 0.3 720 S P 1215 6.0 20.4 21.6 60 -11 0.2 718 S P Electrical Specifications: Freq. = 960 - 1215 MHz, T = 25C A Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: V = 50 V I = 500 mA Pulse = 128 s / 10% DD DQ Input Power P = 650 W Peak (65 W avg.) P 5.8- 9.2 Wpk OUT IN Power Gain P = 650 W Peak (65 W avg.) G 20.518.5 - dB OUT P Drain Efficiency P = 650 W Peak (65 W avg.) 6257 - % OUT D Pulse Droop P = 650 W Peak (65 W avg.) Droop - 0.3 0.5 dB OUT Load Mismatch Stability P = 650 W Peak (65 W avg.) VSWR-S - 3:1 - - OUT Load Mismatch Tolerance P = 650 W Peak (65 W avg.) VSWR-T - 3:1 - - OUT Electrical Characteristics: T = 25C A Parameter Test Conditions Symbol Typ. Units DC Characteristics Drain-Source Leakage Current V = -8 V, V = 175 V I 1.7 mA GS DS DS Gate Threshold Voltage V = 5 V, I = 90 mA V -3.1 V DS D GS (TH) Forward Transconductance V = 5 V, I = 21 mA G 22 S DS D M Dynamic Characteristics Input Capacitance Not applicable - Input matched C N/A pF ISS Output Capacitance V = 50 V, V = -8 V, F = 1 MHz C 55 pF DS GS OSS Reverse Transfer Capacitance V = 50 V, V = -8 V, F = 1 MHz C 5.5 pF DS GS RSS 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: