MAAP-110150 Power Amplifier Rev. V2 10.0 - 15.35 GHz Features Functional Schematic Fully Integrated Power Amplifier Wide Bandwidth 10.0 - 15.35 GHz 30 dB Small Signal Gain 40 dBm Third Order Intercept Point (OIP3) 31 dBm Output P1dB Integrated Power Detector Bias Voltage 5 V, 1.3 A Lead-Free 5 mm 24-lead QFN Package RoHS* Compliant Description The MAAP-110150 is a packaged linear power amplifier that operates over the range 10.0 - 15.35 GHz. The device typically provides 30 dB of gain and 40 dBm OIP3 with more than 31 dBm of output P1dB. This power amplifier is assembled in a lead free, 3,4 Pin Configuration fully molded 5 mm QFN package and consists of a 3 stage power amplifier with integrated, on-chip peak power detector and envelope detector. The Envelope device includes on-chip ESD protection structures 1 No Connection 13 Power Detector and DC by-pass capacitors to ease the implementation and volume assembly. 2 No Connection 14 No Connection 3 Ground 15 Ground The device is well suited for use in the 10, 11, 13, 15 GHz cellular backhaul applications. 4 RF Input 16 RF Output 5 Ground 17 Ground 1,2 6 No Connection 18 No Connection Ordering Information 7 Gate Voltage 1,2 19 No Connection 8 Gate Voltage 3 20 Drain Voltage 3 MAAP-110150 Bulk 9 No Connection 21 Drain Voltage 1,2 MAAP-110150-TR0500 Tape and Reel 10 No Connection 22 No Connection 11 Drain Voltage 3 23 No Connection MAAP-110150-001SMB Sample Board Peak 12 24 No Connection Power Detector 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. 3. MACOM recommends connecting unused package pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-110150 Power Amplifier Rev. V2 10.0 - 15.35 GHz Electrical Specifications: Freq. = 10.0 - 15.35 GHz, I = 1.3 A, T = 25C, V = 5 V, Z = 50 DQ A D 0 10.00 - 10.30 GHz 30.75 10.30 - 11.70 GHz 27.0 31.00 Gain dB 12.75 - 13.25 GHz 27.0 30.00 14.50 - 15.35 GHz 27.0 31.00 10.00 - 10.30 GHz 31.50 10.30 - 11.70 GHz 31.75 P1dB, 1 dB Compression dBm 12.75 - 13.25 GHz 31.75 14.50 - 15.35 GHz 31.50 10.00 - 10.30 GHz 34.25 10.30 - 11.70 GHz 32.5 34.50 P dBm SAT 12.75 - 13.25 GHz 32.5 34.00 14.50 - 15.35 GHz 31.5 33.50 10.00 - 10.30 GHz 40.50 10.30 - 11.70 GHz 38.0 41.00 OIP3 dBm 12.75 - 13.25 GHz 38.0 40.00 14.50 - 15.35 GHz 35.5 37.50 Input Return Loss dB 12 Output Return Loss dB 12 PAE, 1 dB Compression % 20 Quiescent Current mA 1300 5,6,7 8,9 Absolute Maximum Ratings Maximum Operating Ratings Drain Voltage (V 1,2,3) 7 V P 10 W D DISS Gate Voltage (V 1,2,3) -3 V G Operating Temperature -40C to +85C Drain to Gate Voltage 10 V Junction Temperature +150C (V -V ) D G 8. Channel temperature directly affects device MTTF. Channel Storage Temperature -65C to +150C temperature should be kept as low as possible to maximize lifetime. Thermal resistance, is 9.2 C/W. JC Junction Temperature +175C 9. For saturated performance, it is recommended that the sum of (2V + abs (V )) <15 V. DD GG 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Operating at nominal conditions with T +150C will ensure J 6 MTTF > 1 x 10 hours. 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: