Product Information

MAAP-011298-TR0500

MAAP-011298-TR0500 electronic component of MACOM

Datasheet
RF Amplifier 27 GHz 31.5 GHz 2.3 Watt Power Amplifier

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 97.4531 ea
Line Total: USD 194.91

207 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
150 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2
Multiples : 1
2 : USD 104.5687

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Input Return Loss
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
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MAAP-011298 Power Amplifier, 2.3 W Rev. V1 27 - 31.5 GHz Features Functional Schematic High Gain: 24.5 dB P1dB: 32.5 dBm P3dB: 33.5 dBm 32 31 30 28 26 25 29 27 IM3 Level: -17.5 dBc POUT = 30 dBm/tone Power Added Efficiency: 26% P3dB 24 GND 1 GND Temperature Compensated Output Power N/C 2 23 N/C Detector Lead-Free 5 mm AQFN 32-lead Package 22 GND 3 GND RoHS* Compliant 21 RFIN 4 RFOUT Description N/C 5 20 GND The MAAP-011298 is a 2.3 Watt, 4-stage power N/C 6 19 DET amplifier assembled in a lead-free 5 mm 32-lead N/C 7 18 N/C AQFN plastic package. This power amplifier operates from 27 to 31.5 GHz and provides 24.5 dB GND 8 17 GND of linear gain, 2.3 W saturated output power and 9 10 11 12 13 14 15 16 26% efficiency while biased at 6 V. The MAAP-011298 can be used as a power amplifier stage or as a driver stage in higher power applications. This device is ideally suited for VSAT 3,4 Pin Configuration and 28 GHz PTP applications. Pin Pin Name Description This product is fabricated using a GaAs pHEMT 4 RF RF Input IN process which features full passivation for enhanced reliability. 10, 11 V Gate Voltage G 14, 27, 28 V 3 Drain Voltage 3 D 15, 26 V 4 Drain Voltage 4 D 19 DET Power Detector 21 RF RF Output OUT 1,2 29 V 2 Drain Voltage 2 D Ordering Information 31 V 1 Drain Voltage 1 D Part Number Package 1, 3, 8, 9, 16, 20, GND Ground MAAP-011298-TR0500 500 piece reel 22, 24, 25, 32 2, 5 - 7, 12, MAAP-011298-SMB sample board N/C No Connection 13, 18, 23, 30 1. Reference Application Note M513 for reel size information. 3. MACOM recommends connecting all No Connection (N/C) 2. All sample boards include 3 loose parts. pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-011298 Power Amplifier, 2.3 W Rev. V1 27 - 31.5 GHz Electrical Specifications: T = +25C, V = 6 V, Z = 50 A D 0 Parameter Test Conditions Units Min. Typ. Max. P = -5 dBm, 27 GHz 21.0 26.5 IN Gain P = -5 dBm, 29 GHz dB 24.0 27.0 IN P = -5 dBm, 31 GHz 22.0 24.0 IN P = 9.0 dBm, 27 GHz 31.0 33.0 IN Output Power P = 10.5 dBm, 29 GHz dBm 33.0 34.5 IN P = 12.5 dBm, 31 GHz 32.0 34.0 IN IM3 Level P = 30 dBm / tone dBc -17.5 OUT Power Added Efficiency P = 12 dBm % 26 IN Input Return Loss P = -20 dBm dB 10 IN Output Return Loss P = -20 dBm dB 10 IN Quiescent Current I (see bias conditions, page 4 ) mA 1000 DSQ Drain Current (V + V + V + V ) P = 12 dBm mA 1700 D1 D2 D3 D4 IN 7,8 Maximum Operating Ratings Absolute Maximum Ratings Parameter Rating Parameter Absolute Maximum Input Power P < 3 dB Compression Input Power 15 dBm IN 5,6 Junction Temperature +160C Drain Voltage +6.5 V Operating Temperature -40C to +85C Gate Voltage -3 to 0 V 9 5. Operating at nominal conditions with junction temperature Junction Temperature +175C 6 +160C will ensure MTTF > 1 x 10 hours. Storage Temperature -65C to +125C 6. Junction Temperature (T ) = T + * ((V * I) - (P - P )) J C JC OUT IN Typical thermal resistance ( ) = 7.4 C/W. JC 7. Exceeding any one or combination of these limits may cause a) For T = +25C, P = 10.5 dBm C IN permanent damage to this device. T = +80C 6 V, 1.7 A, P = 34.5 dBm J OUT 8. MACOM does not recommend sustained operation near these b) For T = +85C, P = 10.5 dBm C IN survivability limits. T = +140C 6 V, 1.6 A, P = 33.3 dBm J OUT 9. Junction temperature directly effects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

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