Product Information

MAAP-011289-TR0500

MAAP-011289-TR0500 electronic component of MACOM

Datasheet
RF Amplifier Ka-Band 3W Power Amp

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 75.5059 ea
Line Total: USD 37752.95

0 - Global Stock
MOQ: 500  Multiples: 500
Pack Size: 500
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 500
Multiples : 500
500 : USD 74.716

     
Manufacturer
Product Category
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Test Frequency
Brand
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
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MAAP-011289 Power Amplifier, 3 W Rev. V3 28 - 30 GHz Features Functional Schematic High Gain: 24 dB P1dB: 34 dBm P3dB: 35 dBm 32 31 30 28 26 25 29 27 IM3 Level: -18 dBc P 30 dBm/tone OUT Power Added Efficiency: 23% P3dB GND 1 GND 24 Lead-Free 5 mm AQFN 32-lead Package N/C 2 23 N/C RoHS* Compliant N/C 3 GND 22 Description RF 4 IN 21 RF OUT The MAAP-011289 is a 3 Watt, 4-stage power GND 5 GND 20 amplifier assembled in a lead-free 5 mm 32-lead AQFN plastic package. This power amplifier N/C N/C 6 19 operates from 28 to 30 GHz and provides 24 dB of N/C 7 18 N/C linear gain, 3 W saturated output power and 23% efficiency while biased at 6 V. GND 8 17 GND The MAAP-011289 can be used as a power 9 10 11 12 13 14 15 16 amplifier stage or as a driver stage in higher power applications. This device is ideally suited for VSAT and 28 GHz PTP applications. 3 Pin Configuration This product is fabricated using a GaAs pHEMT process which features full passivation for enhanced reliability. 1 Ground 20 Ground 2 , 3 No Connection 21 RF Output 4 RF Input 22 Ground 5 Ground 23 No Connection 6 , 7 No Connection 24 , 25 Ground 8 , 9 Ground 26 Drain Voltage 4 10 , 11 Gate Voltage 27, 28 Drain Voltage 3 12 , 13 No Connection 29 Drain Voltage 2 1,2 Ordering Information 14 Drain Voltage 3 30 No Connection 15 Drain Voltage 4 31 Drain Voltage 1 MAAP-011289-TR0500 500 piece reel 16 , 17 Ground 32 Ground 4 MAAP-011289-SMB Sample Board 18 , 19 No Connection Paddle Ground 1. Reference Application Note M513 for reel size information. 3. MACOM recommends connecting all No Connection (N/C) 2. All sample boards include 3 loose parts. pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-011289 Power Amplifier, 3 W Rev. V3 28 - 30 GHz Electrical Specifications: Freq. = 28 & 30 GHz, T = +25C, V = 6 V, Z = 50 A D 0 P = -5 dBm, 28 GHz 22 26 IN Gain dB P = -5 dBm, 30 GHz 21 24 IN P = 11 dBm, 28 GHz 33 34.0 IN P dBm OUT P = 13 dBm, 30 GHz 33 34.5 IN IM3 Level P = 30 dBm / tone dBc -18 OUT Power Added Efficiency P = 11 & 13 dBm % 23 IN Input Return Loss P = -20 dBm dB 14 IN Output Return Loss P = -20 dBm dB 14 IN Quiescent Current I (see bias conditions, page 4 ) mA 1500 DQ Current P = 11 & 13 dBm mA 2300 IN 7,8 Maximum Operating Ratings Absolute Maximum Ratings Parameter Rating Parameter Absolute Maximum Input Power, Pulsed 16 dBm Input Power, CW 18 dBm 5,6 Junction Temperature +160C Drain Voltage +6.5 V Gate Voltage -3 to 0 V Operating Temperature -40C to +85C 9 Junction Temperature +175C 5. Operating at nominal conditions with junction temperature 6 +160C will ensure MTTF > 1 x 10 hours. Storage Temperature -65C to +125C 6. Junction Temperature (T ) = T + * ((V * I) - (P - P )) J C JC OUT IN Typical CW thermal resistance ( ) = 4.8 C/W. JC 7. Exceeding any one or combination of these limits may cause a) For T = +25C C permanent damage to this device. T = +75C 6 V, 2.3 A, P = 35.2 dBm, P = 13 dBm J OUT IN 8. MACOM does not recommend sustained operation near these b) For T = +85C survivability limits. C 9. Junction temperature directly effects device MTTF. Junction T = 132C 6 V, 2 A, P = 33.6 dBm, P = 13 dBm J OUT IN temperature should be kept as low as possible to maximize lifetime. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

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