Product Information

MAAM71100

MAAM71100 electronic component of MACOM

Datasheet
RF Amp Chip Single GP 11GHz 10V Die

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 119.6221 ea
Line Total: USD 5981.1

0 - Global Stock
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 50
Multiples : 50

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MAAM71100
MACOM

50 : USD 119.6221

     
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Operating Frequency
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MAAM71100 GaAs MMIC Power Amplifier Rev. V6 7.0 - 11.0 GHz Features Die +31 dBm Typical Saturated Power 18 dB Typical Gain 30% Typical Power Added Efficiency On-Chip Bias Network DC Decoupled RF Input and Output Description The MAAM71100 is a GaAs MMIC two stage high efficiency power amplifier. The MAAM71100 is a fully monolithic design for operation in 50 systems, with an on-chip negative bias network which eliminates the need for external bias circuitry. 1 Ordering Information Schematic D A B C E G2 G1 GND D1 G2 GND D2 Part Number Package MAAM71100 Die 1. Die quantity varies. RF IN RF OUT 2 Absolute Maximum Ratings Parameter Absolute Maximum G2 G1 GND D1 G2 GND D2 V +10 V DD A B C D E V -5 V GG Input Power +23 dBm Operating Channel +150C Temperature Storage Temperature -65C to +150C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAM71100 GaAs MMIC Power Amplifier Rev. V6 7.0 - 11.0 GHz Electrical Specifications: T = 25C, Z = 50 , V = +8 V, V = -1.2 V Typ A 0 DD GG Parameter Test Conditions Units Min. Typ. Max. Gain dB 14 18 Input VSWR Ratio 2.0:1 Output VSWR Ratio 4.5:1 Saturated Power Output Input Power = +18 dBm dBm +31 Output Power at 1 dB Gain Compression dBm +28 Third Order Intercept dBm +38 Reverse Isolation dB 30 I (No RF) mA 520 DSQ Bias Current I Pin = +18 dBm mA 750 DD Thermal Resistance C/W 12 Typical Performance Curves Output Power and Power added efficiency vs. Linear Gain and Input Return Loss vs. Frequency Frequency Pin = +18 dBm 25 -5 34 60 S21 20 -10 32 Pout 50 15 -15 30 40 S11 10 -20 28 30 PAE 5 -25 26 20 0 -30 24 10 6 7 8 9 10 11 12 6 7 8 9 10 11 12 Frequency (GHz) Frequency (GHz) Output Power and Power added efficiency vs. Input Power 9 GHz 34 50 30 40 Pout 26 30 22 20 PAE (%) 18 10 14 0 0 4 8 12 16 20 Pin (dBm) 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

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