MA4SPS552

MA4SPS552 SURMOUNTTM PIN Diode Rev. V3 2 Features Package Dimensions Surface Mount Device No Wirebonds Required A Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Ultra-Low Parasitic Capacitance and Inductance Higher Power Handling (Efficient Heat sinking) B RoHS* Compliant Description The MA4SPS552 is a silicon-glass PIN diode chip fabricated with MACOMs patented HMIC process. This device features two silicon pedestals embedded in a low loss glass. The diode is formed on the top of one pedestal and connections to the C backside of the device are facilitated by making the pedestal sidewalls conductive. Selective backside metallization is applied producing a surface mount D E F device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. G These packageless devices are suitable for usage in moderate incident power (5 W CW) or higher incident peak power (200 W, 1 s, 0.001 Duty) series, shunt, or series-shunt switches. Small parasitic inductance, 0.7 nH, and excellent RC constant (0.20 ps) make the devices ideal for TR switch and accessory switch circuits, where higher INCHES MM P1db and IP3 values are required. DIM MIN MAX MIN MAX These diodes can also be used in , T, Tapered A 0.0207 0.0226 0.525 0.575 Resistance, and Switched-Pad Attenuator Control Circuits for 50 or 75 systems. B 0.0108 0.0128 0.275 0.325 C 0.0040 0.0080 0.102 0.203 1 Ordering Information D 0.0075 0.0095 0.190 0.241 Part Number Package E 0.0032 0.004 0.081 0.101 MA4SPS552 100 pc. die in carrier F 0.0061 0.0081 0.155 0.205 MADP-000552-12810T 3000 pc. pocket tape on reel G 0.0069 0.0089 0.175 0.225 1. Reference Application Note M513 for reel size information. 2. Backside metal: 0.1 m thick. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4SPS552 SURMOUNTTM PIN Diode Rev. V3 Electrical Specifications +25C Symbol Parameter Conditions Units Min. Typ. Max. -40 V, 1 MHz 0.08 0.14 C Capacitance pF T -40 V, 1 GHz 0.06 100 mA, 100 MHz 1.7 R Resistance S 20 mA, 100 MHz 2.4 100 mA 1.00 1.25 V Forward Voltage V F 10 mA 0.88 1.00 V Reverse Voltage -10 A V - 200 - 275 R I Reverse Leakage Current -40 V nA - 10 R R Thermal Resistance Steady State C/W 30 JC +10 mA / -6 mA T Lifetime s 2.5 L ( 50% - 90% V ) 3,4 Absolute Maximum Ratings Parameter Absolute Maximum Dissipated RF & DC Power 1 W Handling Procedures Forward Current 100 mA Please observe the following precautions to avoid damage: Reverse Voltage -200 V Operating Temperature -65C to +150C Static Sensitivity These electronic devices are sensitive to Storage Temperature -65C to +150C electrostatic discharge (ESD) and can be damaged Junction Temperature +175C by static electricity. Proper ESD control techniques should be used when handling these devices. Mounting Temperature +260C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: