Product Information

KBT5401C

KBT5401C electronic component of Kodenshi

Datasheet
Transistors (NPN/PNP) PNP 600mA 160V SOT-23 RoHS

Manufacturer: Kodenshi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0329 ea
Line Total: USD 0.66

4656 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
4753 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 20
Multiples : 20

Stock Image

KBT5401C
Kodenshi

20 : USD 0.0129
200 : USD 0.0105
600 : USD 0.0092
3000 : USD 0.0066
9000 : USD 0.0059
21000 : USD 0.0055

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Operating Temperature
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The KBT5401C is a PNP type transistor manufactured by Kodenshi. It is a 600mA 160V amplifier transistor with SOT-23 package type in RoHS compliant version. It is a three-terminal device in a small SOT-23 package and offers low and high gain characteristics along with good durable performance under harsh conditions. The device features low collector-emitter saturation voltage VCE (sat) of 0.45V at a collector current of 600mA, making it ideal for high-frequency applications. It has high maximum junction temperature capability of -55°C to +175°C. The maximum collector current Ic is 600mA and maximum collector-emitter voltage VCE is 160V. This part is widely used in audio amplifiers, frequency converters, portable communication apps and general purpose switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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