Product Information

K2N7002K

K2N7002K electronic component of Kodenshi

Datasheet
MOSFET N Trench 60V 300mA 2.5V @ 250uA 3 Ω @ 500mA,10V SOT-23 RoHS
Manufacturer: Kodenshi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0153 ea
Line Total: USD 0.31

1726 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
1280 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 20
Multiples : 20

Stock Image

K2N7002K
Kodenshi

20 : USD 0.0149
200 : USD 0.012
600 : USD 0.0104
3000 : USD 0.0081
9000 : USD 0.0073
21000 : USD 0.0069

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The K2N7002K is a MOSFET N-channel Trench 60V 300mA 2.5V @ 250uA 3 Ω @ 500mA, 10V SOT-23 RoHS manufactured by Kodenshi. This MOSFET is specifically designed for small, low-noise applications, such as cellular phones and wireless updates. It features a high-performance 60V blocking voltage and low dynamic resistance that helps reduce power consumption by up to 30%. Furthermore, due to its small SOT-23 body and lead-free RoHS compliance, it is a great choice for space-conscious designs. With a drain-source on-resistance of 3 Ω @ 500mA, this transistors can handle high currents with minimal losses.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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