Product Information

KM-4457P3C

KM-4457P3C electronic component of Kingbright

Datasheet
TRANSISTOR, PHOTO, NPN
Manufacturer: Kingbright
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2831 ea
Line Total: USD 0.28

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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KM-4457P3C
Kingbright

1 : USD 0.3367
50 : USD 0.2649
100 : USD 0.2347
500 : USD 0.2073
1000 : USD 0.2029
2500 : USD 0.1918

Read More Specifications

     
Manufacturer
Product Category
Viewing Angle
Packaging
Wavelength Typ
Power Consumption
Transistor Case Style
No Of Pins
Msl
Svhc
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Additional Infomation About Product

PHOTOTRANSISTOR Part Number: KM-4457P3C Description Features Made with NPN silicon phototransistor chips. z Mechanically and spectrally matched to infrared emitting LED lamp. z RoHS compliant. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SPEC NO: DSAB0353 REV NO: V.9 DATE: JAN/24/2013 PAGE: 1 OF 3 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Y.Liu ERP: 1202001801 Electrical / Optical Characteristics at TA=25C Symbol Parameter Min. Typ. Max. Units Test Conditions IC=100uA VBR CEO Collector-to-Emitter Breakdown Voltage 30 V Ee=0mW/c IE=100uA VBR ECO Emitter-to-Collector Breakdown Voltage 5 V Ee=0mW/c IC=2mA VCE (SAT) Collector-to-Emitter Saturation Voltage 0.8 V Ee=20mW/c VCE=10V I CEO Collector Dark Current 100 nA Ee=0mW/c TR Rise Time (10 to 90 ) 15 us VCE = 5V IC=1mA TF Fall Time (90 to 10 ) 15 us RL=1000 VCE = 5V I (ON) On State Collector Current 0.35 0.8 mA Ee=1mW/c =940nm Absolute Maximum Ratings at TA=25C Parameter Max.Ratings Collector-to-Emitter Voltage 30V Emitter-to-Collector Voltage 5V Power Dissipation at (or below) 25C Free Air Temperature 100mW Operating Temperature -40C To +85C Storage Temperature -40C To +85C Lead Soldering Temperature (>5mm for 5sec) 260C SPEC NO: DSAB0353 REV NO: V.9 DATE: JAN/24/2013 PAGE: 2 OF 3 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Y.Liu ERP: 1202001801

HS Compliance

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

Kingbright may also be referenced as

KBR
KINGBRIGHT
Kingbright Company LLC
Kingbright Corp
Kingbright Corporation
KINGBRIGHT ELECTRONIC

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