Product Information

HMMC-1002

HMMC-1002 electronic component of Keysight

Datasheet
Voltage Variable Attenuator 40dB Attenuation 26500MHz 40dB Attenuation 26500MHz Chip
Manufacturer: Keysight
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 50.7925 ea
Line Total: USD 2539.62

0 - Global Stock
MOQ: 50  Multiples: 50
Pack Size: 50

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0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 50
Multiples : 50

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HMMC-1002
Keysight

50 : USD 66.2946

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Additional Infomation About Product

Keysight HMMC-1002 DC50 GHz Variable Attenuator 1GG7-8001 Data Sheet Features Specified frequency range: DC to 26.5 GHz Return loss: 10 dB Minimum attenuation: 2.0 dB Maximum attenuation: 30.0 dB02 Keysight HMMC-1002 DC50 GHz Variable Attenuator - Data Sheet Description The HMMC-1002 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. It is fabricated using WPTCs MMICB process which features an MBE epitaxial layer, backside ground vias, and FET gate lengths of approximately 0.4 m. The variable resistive elements of the HMMC-1002 are two 750 m wide series FETs and four 200 m wide shunt FETs. The distributed topology of the HMMC-1002 minimizes the parasitic effects of its series and shunt FETs, allowing the HMMC-1002 to exhibit a wide Chip size: dynamic range across its full bandwidth. An on-chip DC reference circuit may be used 1470 x 610 m (57.9 x 24.0 mils) to maintain optimum VSWR for any attenuation setting or to improve the attenuation Chip size tolerance: versus voltage linearity of the attenuator circuit. 10 m (0.4 mils) Chip thickness: 127 15 m (5.0 0.6 mils) RF pad dimensions: 60 x 70 m (2.4 x 2.8 mils) or larger DC pad dimensions: 75 x 75 m (3.0 x 3.0 mils) or larger 1 Absolute Maximum Ratings Symbol Parameters/conditions Minimum Maximum Units V DC voltage to RF ports 0.6 +1.6 Volts DC-RF V V control voltage 5.0 +0.5 Volts 1 1 V V control voltage 5.0 +0.5 Volts 2 2 V DC in/DC out 0.6 +1.0 Volts DC P RF input power 17 dBm in T Minimum ambient operating temperature 55 C mina T Maximum ambient operating temperature +125 C maxa T Storage temperature 65 +165 C stg T Maximum assembly temperature +300 C max (for 60 seconds maximum) 1. Operation in excess of any one of these conditions may result in damage to this device

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