TANCERAM CHIP CAPACITORS TANCERAM chip capacitors can replace tantalum capacitors in many applications and offer several key advantages over traditional tantalums. Because Tanceram capacitors exhibit extremely low ESR, equivalent circuit performance can often be achieved using considerably lower capacitance values. Low DC leakage reduces current drain, extending the battery life of portable products. Tancerams high DC breakdown voltage ratings offer improved reliability and eliminate large voltage de-rating common when designing with tantalums. ADVANTAGES Low ESR Low DC Leakage Higher Surge Voltage Non-polarized Devices Reduced CHIP Size Improved Reliability Higher Insulation Resistance Higher Ripple Current APPLICATIONS Switching Power Supply Smoothing (Input/Output) Backlighting Inverters DC/DC Converter Smoothing (Input/Output) General Digital Circuits Typical ESR Comparison Typical Breakdown Voltage Comparison 10 100% 1.0 F / 16V Tantalum 1.0 F / 16V Tantalum 75% 1 50% 1.0 F / 16V TANCERAM 1.0 F / 16V TANCERAM 0.1 25% 0.01 0% 0 100 200 300 400 500 0.001 0.01 0.1 1 10 100 Frequency (MHz) DC Breakdown Voltage HOW TO ORDER TANCERAM Part number written: 100R15X106MV4E 100 R15 X 106 M V 4 E VOLTAGE SIZE DIELECTRIC CAPACITANCE TOLERANCE TERMINATION MARKING PACKING Code Type Reel 6R3 = 6.3 V See Chart W = X7R 1st two digits are K = 10% V = Nickel Barrier 4 = Unmarked E Plastic 7 100 = 10 V X = X5R significant third digit with 100% Tin M = 20% T Paper 7 160 = 16 V denotes number of Plating (Matte) Tape specifications 250 = 25 V zeros. T = SnPb* conform to EIA RS481 500 = 50 V 105 = 1.00 F 101 = 100 V 476 = 4.70 F (*available on 107 = 10.0 F select parts) 18 www.johansondielectrics.com ESR (Ohms) % Distribution TANCERAM CHIP CAPACITORS CASE SIZE CAPACITANCE SELECTION EIA / JDI Inches (mm) VDC 1.0 F 2.2 F 3.3 F 4.7 F 10 F 22 F 47 F 100 F L .040 .004 (1.02 .10) 16 0402 W .020 .004 (0.51 .10) W T .025 Max. (0.64) L 10 DIELECTRIC R07 EB .008 .004 (0.20.10) 6.3 W (X7R) T E/B 25 L .063 .008 (1.60 .20) X (X5R) 16 0603 W .032 .008 (0.81 .20) T .035 Max. (0.89) 10 R14 EB .010.005 (.25.13) 6.3 50 L .080 .010 (2.03 .25) 25 0805 W .050 .010 (1.27 .25) 16 T .060 Max. (1.52) R15 10 EB .020.010 (0.51.25 ) 6.3 100 50 L .125 .010 (3.17 .25) 35 1206 W .062 .010 (1.57 .25) 25 T .070 Max. (1.78) R18 16 EB .020 +.015-0.01 (0.51+.38-.25) 10 6.3 100 50 L .125 .010 (3.18 .25) 35 1210 W .095 .010 (2.41 .25) 25 T .110 Max. (2.8) S41 16 EB .020 +.015-.010 (0.51+.38-.25) 10 6.3 100 50 L .175 .010 (4.45 .25) 25 1812 W .125 .010 (3.17 .25) T .140 Max. (3.55) 16 S43 EB .035 .020 (0.89 0.51) 10 6.3 WX WX WX WX WX WX WX WX ELECTRICAL CHARACTERISTICS Dielectric: X7R X5R Temperature Coefficient: 15% (-55 to +125C) 15% (-55 to +85C) For 50 VDC: 5% max. For 50 VDC: 5% max. Dissipation Factor: For 25 VDC: 10% max. For 25 VDC: 10% max. Insulation Resistance (Min. 25C, Wvdc) 100 F or 10 G, whichever is less Dielectric Strength: 2.5 X WVDC, 25C, 50mA max. Capacitance values 22 F: 1.0kHz50Hz 1.00.2 Vrms Test Conditions: Capacitance values > 22 F: 120Hz10Hz 0.5V0.1 Vrms Other: See page 35 for additional dielectric specifications. 19 www.johansondielectrics.com