IS29GL256-70SLET-TR

IS29GL256 IS29GL128 256Mb/128Mb 3.0V PAGE MODE PARALLEL FLASH MEMORY DATA SHEET IS29GL256/128 IS29GL256/128 256/128 Megabit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES Single power supply operation WP /ACC input - Full voltage range: 2.7 to 3.6 volts read and write operations - Accelerates programming time (when V is HH applied) for greater throughput during system Fast Access Time at -40C to +125C: production (1) - 70ns at Vcc = 3.0V~3.6V, V = 3.0V~3.6V IO - V Input/Output 1.65V to 3.6V. - Protects first or last sector regardless of sector IO - All input levels (address, control, and DQ input protection settings levels) and outputs are determined by voltage Hardware reset input (RESET ) resets device on VIO input. Ready/Busy output (RY/BY ) detects program 8-word/16-byte page read buffer or erase cycle completion 32-word/64-byte write buffer reduces overall Minimum 100K program/erase endurance programming time for multiple-word updates cycles. Secured Silicon Region (SSR) Data retention : 20 years (TYP) - 512-word/1024-byte sector for permanent, secure identification Package Options - 256-word Factory Locked SSR and 256-word - 56-pin TSOP Customer Locked SSR - 64-ball 13mm x 11mm BGA (Call Factory) - 64-ball 9mm x 9mm BGA Uniform 64Kword/128KByte Sector - 56-ball 9mm x 7mm BGA (Call Factory) Architecture Temperature Range Suspend and Resume commands for Program - Extended Grade: -40C to +105C and Erase operations - Automotive Grade: -40C to +125C Write operation status bits indicate program and erase operation completion Note: 1. 80ns at Vcc=2.7V~3.6V, V =2.7V~3.6V. IO Support for CFI (Common Flash Interface) 90ns at Vcc=2.7V~3.6V, V =1.65V ~ Vcc. IO Volatile and non-volatile methods of Advanced Sector Protection GENERAL DESCRIPTION The IS29GL256/128 offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays embedded applications that require higher density, better performance and lower power consumption. Integrated Silicon Solution, Inc. - www.issi.com 2 Rev. A5 06/29/2021