Product Information

FTB07N08N

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TO-263-2 MOSFETs ROHS

Manufacturer: IPS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.7363 ea
Line Total: USD 0.74

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 31 May to Wed. 05 Jun MOQ : 1 Multiples : 1 FTB07N08N IPS	1 : USD 0.7363 10 : USD 0.6131 30 : USD 0.5627 100 : USD 0.5095 500 : USD 0.4731 1000 : USD 0.4536

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Additional Infomation About Product

&TThe FTB07N08N with TO-263-2 MOSFETs ROHS is a logic level N-channel enhancement MOSFET manufactured by IPS&T. This MOSFET is suitable for power switching applications. It has low threshold voltage for ease of drive and low on-resistance for increased efficiency. It is designed using a process that meets the requirements of Restriction of Hazardous Substances Directive (RoHS) and features an industry standard D2PAK and TO-263-2 package. The FTB07N08N has 800V drain-source voltage, 7A drain-source current and 0.08ohm on-resistance making it ideal for applications such as solar inverters, Computing & Storage, and Industrial Automation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

IPS may also be referenced as

IPS

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Manufacturer IPS IPS
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package TO - 263 TO - 263
Brand Category Ips Ips
Drain Source Voltage Vdss - -
Continuous Drain Current Id - -
Drain Source On Resistance Rdson@Vgs Id - -
Power Dissipation Pd - -
Gate Threshold Voltage Vgsth@Id - -
Reverse Transfer Capacitance Crss@Vds - -
Type - -
Input Capacitance Ciss@Vds - -
Total Gate Charge Qg@Vgs - -