Product Technical OrOrdderer Folder Support NowNow InterFET IF4520 IF4520 N-Channel JFET Features TO-18 Bottom View InterFET N0450S Geometry Gate/Case Low Noise: 1.0 nV/Hz Typical 3 Replacement for SNJ450113 Drain 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Low R(ON) Switch Low-Noise, High Gain Amplifier SOT23 Top View Description Drain 1 The -40V InterFET IF4520 is a higher voltage Gate 3 version of the low noise high gain IF4500 JFET. The TO-72 package is hermetically sealed and Source 2 suitable for military applications. Product Summary Parameters IF4520 Min Unit BV Gate to Source Breakdown Voltage -40 V GSS I Drain to Source Saturation Current 8 mA DSS VGS(off) Gate to Source Cutoff Voltage -0.3 V GFS Forward Transconductance 20 (Typ) mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IF4520T18 Through-Hole TO-18 Bulk IF4520ST3 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces IF4520ST3TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel IF4520COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IF4520CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35096.R00Product Technical OrOrdderer Folder Support NowNow InterFET IF4520 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.8 mW/C T Operating Junction Temperature -55 to 150 C J T Storage Temperature -65 to 175 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IF4520 Parameters Conditions Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -40 -45 V Breakdown Voltage Gate to Source IGSS VGS = -10V, VDS = 0V -50 -1000 pA Reverse Current Gate to Source VGS(OFF) VDS = 10V, ID = 1nA -0.3 V Cutoff Voltage Drain to Source V = 0V, V = 15V GS DS IDSS 8 20 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IF4520 Parameters Conditions Min Typ Max Unit Forward GFS VDS = 15V, VGS = 0V, f = 1kHz 20 30 mS Transconductance Ciss Input Capacitance VDS = 0V, VGS = -10V, f = 1MHz 75 pF Reverse Transfer Crss VDS = 0V, VGS = -10V, f = 1MHz 15 pF Capacitance IF4520 2 of 4 InterFET Corporation Document Number: IF35096.R00 www.InterFET.com June, 2019