INL-5APT30 5mm Phototransistor Though Hole Lamp LED Optoelectronic switch Features Printer Low power consumption Counters and sorters General purpose leads Encoders Bulk, Available on tape and reel Floppy disk drive Fast response time Video camera, tape and card readers High photo sensitivity Position sensors Small junction capacitance Compliance with EU REACH Description The product itself remain within RoHS compliant version The INL-5APT30 is a high speed and high sensitive silicon NPN phototransistor in a standard 5mm epoxy package. Applications Due to its clear epoxy, the device is matched to visible light and infrared radiation. Infrared application system Optoelectronic automatic control system Package Dimensions in mm Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25 mm (.010 ) unless otherwise noted. Figure 1. INL-5APT30 Package Dimensions Inolux Corporation January, 24, 2019 www.inolux-corp.com Proprietary & Confidential Page 1 INL-5APT30 5mm Phototransistor Though Hole Lamp LED o Absolute Maximum Rating at 25 C Symbol Parameters Ratings Units Notes BVCEO Collector-Emitter Breakdown Voltage 30 V 1 BVECO Emitter-Collector Breakdown Voltage 5 V 2 Ic Collector Current 20 mA Topr Operating Temperature -40~+80 Tstg Storage Temperature -40~+85 Tsol Soldering Temperature 260 3 PD Total Power Dissipation 75 mW Notes 1. Test conditions: IC=100A, Ee=0mW/cm2. 2. Test conditions: IE=100A, Ee=0mW/cm2. 3. Soldering time5 seconds. Electro-Optical Characteristics Test Symbol Parameters Min Typ Max Units conditions D Rang of Spectral Bandwidth --- 400 - 1100 nm Wavelength of Peak P --- - 940 nm Sensitivity Collector-Emitter Breakdown IC=100A BVCEO 30 - - V Voltage Ee=0mW/cm Emitter-Collector Breakdown IE=100A BVECO 5 - - V Voltage Ee=0mW/cm IC=0.7mA Collector-Emitter Saturation VCE(sat) - - 0.4 V Voltage Ee=1mW/cm VCE=20V ICEO Collector Dark Current - - 100 nA Ee=0mW/cm Ee=1mW/cm P=940nm, IC(ON) On State Collector Current 0.7 2.5 - mA VCE=5V VCE=5V, tr Rise Time - 15 - uS IC=1mA tf Fall Time - 15 - uS RL=1000 ESD Precaution ATTENTION: Electrostatic Discharge (ESD) protection The symbol above denotes that ESD precaution is needed. ESD protection for GaP and AlGaAs based chips is necessary even though they are relatively safe in the presence of low static-electric discharge. Parts built with AlInGaP, GaN, or/and InGaN based chips are STATIC SENSITIVE devices. ESD precaution must be taken during design and assembly. If manual work or processing is needed, please ensure the device is adequately protected from ESD during the process. Please be advised that normal static precautions should be taken in the handling and assembly of this device to prevent damage or degradation which may be induced by electrostatic discharge (ESD). Inolux Corporation January, 24, 2019 www.inolux-corp.com Proprietary & Confidential Page 2