INL-3ANPD80 3mm Photodiode Though Hole Lamp LED Features Description The INL-3ANPD80 is a high speed and high Low power consumption sensitive silicon PIN photodiode in a standard 3mm epoxy package. General purpose leads Bulk, Available on tape and reel Due to its black epoxy, the device is sensitive to near and infrared radiation. Fast response time High photo sensitivity Small junction capacitance Compliance with EU REACH The product itself remain within RoHS compliant version Applications High speed photo detector Automatic door sensor Security system Industrial equipment Infrared application system Package Dimensions in mm Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25 mm (.010 ) unless otherwise noted. Figure 1. INL-3ANPD80 Package Dimensions Inolux Corporation January, 24, 2019 www.inolux-corp.com Proprietary & Confidential Page 1 INL-3ANPD80 3mm Photodiode Though Hole Lamp LED o Absolute Maximum Rating at 25 C Symbol Parameters Ratings Units Notes VR Reverse Voltage 32 V 1 Topr Operating Temperature -40~+80 Tstg Storage Temperature -40~+85 Tsol Soldering Temperature 260 2 PD Total Power Dissipation 150 mW Notes 1. Test conditions : IR=100A, Ee=0mW/cm2. 2. Soldering time5 seconds. Electro-Optical Characteristics Test Symbol Parameters Min Typ Max Units conditions D Rang of Spectral Bandwidth --- 400 - 1100 nm Wavelength of Peak P --- - 850 nm Sensitivity Ee=0mW/cm2 Reverse Breakdown Voltage 32 170 - V VBR IR=100uA Ee=1mW/cm Open-Circuit Voltage - 0.4 - V VOC P=850nm Ee=1mW/cm ISC Short-Circuit Current - 35 - uA P=850nm Ee=0mW/cm Dark Current - 5 30 nA ID VR=10V Ee=1mW/cm P=850nm, IL Reverse Light Current 20 35 - uA VR=5V tr Rise Time - 45 - uS VR=10V, RL=100 Fall Time - 45 - uS tf Ee=0mW/cm Transition Capacitance 18 pF CT f=1MHz, VR=5V 21/2 Receiving Angle IF=20mA 80 Deg. ESD Precaution ATTENTION: Electrostatic Discharge (ESD) protection The symbol above denotes that ESD precaution is needed. ESD protection for GaP and AlGaAs based chips is necessary even though they are relatively safe in the presence of low static-electric discharge. Parts built with AlInGaP, GaN, or/and InGaN based chips are STATIC SENSITIVE devices. ESD precaution must be taken during design and assembly. If manual work or processing is needed, please ensure the device is adequately protected from ESD during the process. Please be advised that normal static precautions should be taken in the handling and assembly of this device to prevent damage or degradation which may be induced by electrostatic discharge (ESD). Inolux Corporation January, 24, 2019 www.inolux-corp.com Proprietary & Confidential Page 2