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T1851N60TOH

T1851N60TOH electronic component of Infineon

Datasheet
Infineon Technologies SCR Modules NETZ-THYRISTOR PHASE CONTROL

Manufacturer: Infineon
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T1851N60TOH
Infineon

1 : USD 2520.9571
N/A

Obsolete
     
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Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
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Off-State Leakage Current Vdrm Idrm
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Datenblatt / Data sheet N Netz-Thyristor T 1851N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 6000 6500 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM Kenndaten 7000 V repetitive peak forward off-state and reverse voltage Elektrische Eigenschaften Durchlastrom-Grenzeffektivwert I 3940 A TRMSM maximum RMS on-state current Dauergrenzstrom T = 85 C I 1850 A C TAVM 2510 A average on-state current T = 60 C C Stostrom-Grenzwert T = 25 C, t = 10 ms I 50000 A vj P TSM 48000 A surge current T = T , t = 10 ms vj vj max P Grenzlastintegral T = 25 C, t = 10 ms It 12500 10 As vj P 11500 10 As It-value T = T , t = 10 ms vj vj max P Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) 300 A/s T cr f = 50 Hz, i = 3 A, di /dt = 6 A/s critical rate of rise of on-state current GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 2000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter H Charakteristische Werte / Characteristic values typ. 2,45 V Durchlaspannung T = T , i = 3000A v vj vj max T T max. 2,65 V on-state voltage typ. 1,2 V Schleusenspannung T = T V vj vj max (TO) max. 1,22 V threshold voltage typ. 0,417 m Ersatzwiderstand T = T r vj vj max T max. 0,477 m slope resistance typ. A 0,774 Durchlakennlinie 300A i 3500A T = T F vj vj max on-state characteristic B 0,000186 C -0,0199 D 0,0235 max. A 0,623 v = A + B i + C Ln(i + 1) + D i T B 0,000271 T T T C 0,0346 D 0,0173 350 Zndstrom T = 25C, v = 12 V I max. mA vj D GT gate trigger current 2,5 Zndspannung T = 25C, v = 12 V V max. V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12 V I max. 20 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 10 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,4V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12 V I max. 350mA vj D H holding current Einraststrom T = 25C, v = 12 V, R 10 I max. 3A vj D GK L latching current i = 3 A, di /dt = 6 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 500mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 2s gd gate controlled delay time T = 25 C,i = 3 A, di /dt = 6 A/s vj GM G C. Schneider date of publication: 2006-05-05 prepared by: revision: 5 approved by: J. Przybilla BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller Seite/page 1/9 Datenblatt / Data sheet N Netz-Thyristor T 1851N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values typ. 600 s Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM Thermische Eigenschaften dv /dt = 20 V/s, -di /dt = 10 A/s D T th 4.Kennbuchstabe / 4 letter O Mechanische Eigenschaften max. 12 mAs Sperrverzgerungsladung T = T Q vj vj max r recovered charge i = I , -di /dt = 10 A/s TM TAVM T V = 0,5V , V = 0,8V R RRM RM RRM max. 280 A Rckstromspitze T = T I vj vj max RM peak reverse recovery current i = I , -di /dt = 10 A/s TM TAVM T V = 0,5V , V = 0,8V R RRM RM RRM Thermische Eigenschaften / Thermal properties Khlflche / cooling surface R Innerer Wrmewiderstand thJC beidseitig / two-sided, = 180sin max. 0,0065 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,006 C/W Anode / anode, DC max. 0,011 C/W Kathode / cathode, DC max. 0,013 C/W bergangs-Wrmewiderstand Khlflche / cooling surface R thCH beidseitig / two-sided max. 0,002 C/W thermal resistance, case to heatsink einseitig / single-sided max. 0,004 C/W Hchstzulssige Sperrschichttemperatur T 125C vj max maximum junction temperature Betriebstemperatur T -40...+125 C c op operating temperature Lagertemperatur T -40...+150 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft F 45...65 kN clamping force Steueranschlsse DIN 46244 Gate A 4,8x0,8 control terminals Kathode /Cathode A 6,3x0,8 Gewicht G typ. 1500g weight Kriechstrecke 33mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance BIP AM / SM PB, 2001-04-09, Przybilla J. / Keller Seite/page 2/9

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