PD - 95085A IRLR/U3103PbF HEXFET Power MOSFET Logic-Level Gate Drive Ultra Low On-Resistance D Surface Mount (IRLR3103) V = 30V DSS Straight Lead (IRLU3103) Advanced Process Technology R = 0.019 DS(on) Fast Switching G Fully Avalanche Rated I = 55A D Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D-PAK I-PAK The D-PAK is designed for surface mounting using TO-252AA TO-251AA vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 55 D C GS I T = 100C Continuous Drain Current, V 10V 39 A D C GS I Pulsed Drain Current 220 DM P T = 25C Power Dissipation 107 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 240 mJ AS I Avalanche Current 34 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Junction-to-Ambient (PCB mount) ** 50 C/W JA R Junction-to-Ambient 110 JA www.irf.com 1 IRLR/U3103PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.037 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.019 V = 10V, I = 33A GS D R Static Drain-to-Source On-Resistance DS(on) 0.024 V = 4.5V, I = 25A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 23 S V = 25V, I = 34A fs DS D 25 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 18V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 50 I = 34A g D Q Gate-to-Source Charge 14 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 28 V = 4.5V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 9.0 V = 15V d(on) DD t Rise Time 210 I = 34A r D ns t Turn-Off Delay Time 20 R = 3.4, V = 4.5V d(off) G GS t Fall Time 54 R = 0.43, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 nH D 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 1600 V = 0V iss GS C Output Capacitance 640 pF V = 25V oss DS C Reverse Transfer Capacitance 320 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 55 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 220 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 28A, V = 0V SD J S GS t Reverse Recovery Time 81 120 ns T = 25C, I = 34A rr J F Q Reverse RecoveryCharge 210 310 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2% Calculated continuous current based on maximum allowable junction max. junction temperature. ( See fig. 11 ) temperature Package limitation current = 20A V = 15V, starting T = 25C, L = 300H DD J This is applied for I-PAK, L of D-PAK is measured between lead and S R = 25, I = 34A. (See Figure 12) G AS center of die contact I 34A, di/dt 140A/s, V V , SD DD (BR)DSS Uses IRL3103 data and test conditions T 175C J ** When mounted on 1 square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note AN-994 2 www.irf.com