PD - 94187 IRFY240,IRFY240M POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 16A Glass IRFY240M 0.18 16A Glass HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET Features: transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- ing, ease of paralleling and electrical parameter temperature Simple Drive Requirements stability. They are well-suited for applications such as switch- Ease of Paralleling ing power supplies, motor controls, inverters, choppers, Hermetically Sealed audio amplifiers, high energy pulse circuits, and virtually Electrically Isolated any application where high reliability is required. The Glass Eyelets HEXFET transistors totally isolated package eliminates the For Space Level Applications need for additional isolating material between the device Refer to Ceramic Version Part and the heatsink. This improves thermal efficiency and Numbers IRFY240C, IRFY240CM reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 16 D GS C A I V = 10V, T = 100C Continuous Drain Current 10.2 D GS C I Pulsed Drain Current 64 DM P T = 25C Max. Power Dissipation 100 W D C Linear Derating Factor 0.8 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 580 mJ AS I Avalanche Current 16 A AR E Repetitive Avalanche Energy 10 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300(0.063in./1.6mm from case for 10 sec) Weight 3.3 (Typical) g For footnotes refer to the last page www.irf.com 1 4/18/01IRFY240, IRFY240M Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown 0.29 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.18 V = 10V, I = 10.2A DS(on) GS D Resistance V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 6.1 S ( )V > 15V, I = 10.2A fs DS DS I Zero Gate Voltage Drain Current 25 V = 160V ,V =0V DSS DS GS A 250 V = 160V, DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 60 V =10V, I = 16A g GS D Q Gate-to-Source Charge 10.6 nC V = 50V gs DS Q Gate-to-Drain (Miller) Charge 37.6 gd t Turn-On Delay Time 20 V = 100V, I = 16A, d(on) DD D t Rise Time 152 R = 9.1 r G ns t Turn-Off Delay Time 58 d(off) t Fall Time 67 f Measured from drain lead (6mm/0.25in. from L + L Total Inductance 6.8 S D nH package) to source lead (6mm/0.25in. from package) C Input Capacitance 1300 V = 0V, V = 25V iss GS DS C Output Capacitance 400 pF f = 1.0MHz oss C Reverse Transfer Capacitance 130 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 16 S A I Pulse Source Current (Body Diode) 64 SM V Diode Forward Voltage 1.5 V T = 25C, I = 16A, V = 0V SD j S GS t Reverse Recovery Time 500 nS T = 25C, I = 16A, di/dt 100A/ s rr j F Q Reverse Recovery Charge 5.3 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 1.25 thJC C/W R Case-to-sink 0.21 thCS R Junction-to-Ambient 80 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com