IRFS3306TRLPBF

IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications D High Efficiency Synchronous Rectification in SMPS V 60V DSS Uninterruptible Power Supply R typ. 3.3m DS(on) High Speed Power Switching max. 4.2m Hard Switched and High Frequency Circuits G I 160A D (Silicon Limited) Benefits I 120A D (Package Limited) S Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D Fully Characterized Capacitance and Avalanche D D SOA Enhanced body diode dV/dt and dI/dt Capability S S S Lead-Free D D D G G G RoHS Compliant, Halogen-Free 2 D Pak TO-220AB TO-262 IRFS3306PbF IRFSL3306PbF IRFB3306PbF GD S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFB3306PbF TO-220 Tube 50 IRFB3306PbF IRFSL3306PbF TO-262 Tube 50 IRFSL3306PbF Tube 50 IRFS3306PbF IRFS3306PbF D2Pak Tape and Reel Left 800 IRFS3306TRLPbF Tape and Reel Right 800 IRFS3306TRRPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 160 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 110 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 120 D C GS 620 I Pulsed Drain Current DM 230 P T = 25C Maximum Power Dissipation W D C 1.5 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS Peak Diode Recovery 14 dv/dt V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 184 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.65 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 CS C/W R Junction-to-Ambient, TO-220 62 JA 2 40 R Junction-to-Ambient (PCB Mount) , D Pak JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.3 4.2 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 48V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.7 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 230 S V = 50V, I = 75A DS D Q Total Gate Charge 85 120 nC I = 75A g D Q Gate-to-Source Charge 20 V =30V gs DS Q Gate-to-Drain Mille) Charge 26 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 59 I = 75A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 15 ns V = 30V d(on) DD t Rise Time 76 I = 75A r D t Turn-Off Delay Time 40 R = 2.7 d(off) G t Fall Time 77 V = 10V f GS C Input Capacitance 4520 pF V = 0V iss GS C Output Capacitance 500 V = 50V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz, See Fig. 5 rss C eff. (ER) Effective Output Capacitance (Energy Related) 720 V = 0V, V = 0V to 48V , See Fig. 11 oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 880 V = 0V, V = 0V to 48V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol 160 D S (Body Diode) showing the G I Pulsed Source Current 620 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 31 ns T = 25C V = 51V, rr J R 35 T = 125C I = 75A J F di/dt = 100A/ s Q Reverse Recovery Charge 34 nC T = 25C rr J T = 125C 45 J I T = 25C Reverse Recovery Current 1.9 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 75A, di/dt 1400A/ s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 120A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.04mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom R = 25, I = 96A, V =10V. Part not recommended for use mended footprint and soldering techniques refer to application note AN-994. GS G AS above this value.