PD-95080A IRFR6215PbF IRFU6215PbF HEXFET Power MOSFET P-Channel 175C Operating Temperature D Surface Mount (IRFR6215) V = -150V DSS Straight Lead (IRFU6215) Advanced Process Technology R = 0.295 DS(on) Fast Switching G Fully Avalanche Rated I = -13A D Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D-PAK I-PAK The D-PAK is designed for surface mounting using TO-252AA TO-251AA vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V -13 D C GS I T = 100C Continuous Drain Current, V 10V -9.0 A D C GS I Pulsed Drain Current -44 DM P T = 25C Power Dissipation 110 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 310 mJ AS I Avalanche Current -6.6 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Junction-to-Ambient (PCB mount) ** 50 C/W JA R Junction-to-Ambient 110 JA www.irf.com 1 12/14/04IRFR/U6215PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -150 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.20 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.295 V = -10V, I = -6.6A GS D R Static Drain-to-Source On-Resistance DS(on) 0.58 V = -10V, I = -6.6A T = 150C GS D J V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 3.6 S V = -50V, I = -6.6A fs DS D -25 V = -150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -120V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 66 I = -6.6A g D Q Gate-to-Source Charge 8.1 nC V = -120V gs DS Q Gate-to-Drain Mille) Charge 35 V = -10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 14 V = -75V d(on) DD t Rise Time 36 I = -6.6A r D ns t Turn-Off Delay Time 53 R = 6.8 d(off) G t Fall Time 37 R = 12, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 860 V = 0V iss GS C Output Capacitance 220 pF V = -25V oss DS C Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -13 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -44 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.6 V T = 25C, I = -6.6A, V = 0V SD J S GS t Reverse Recovery Time 160 240 ns T = 25C, I = -6.6A rr J F Q Reverse RecoveryCharge 1.2 1.7 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2% max. junction temperature. ( See fig. 11 ) Starting T = 25C, L = 14mH This is applied for I-PAK, L of D-PAK is measured between lead and J S R = 25, I = -6.6A. (See Figure 12) center of die contact G AS I -6.6A, di/dt -620A/s, V V , SD DD (BR)DSS Uses IRF6215 data and test conditions T 175C J ** When mounted on 1 square PCB (FR-4 or G-10 Material ) For recommended footprint and soldering techniques refer to application note AN-994 2 www.irf.com