IRFI4510GPbF HEXFET Power MOSFET Applications V 100V DSS High Efficiency Synchronous Rectification in SMPS R typ. DS(on) 10.7m Uninterruptible Power Supply High Speed Power Switching max. 13.5m Hard Switched and High Frequency Circuits I 35A D Benefits D D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA S G Enhanced body diode dV/dt and dI/dt Capability D G Lead-Free S Halogen-Free TO-220AB Full-Pak GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units 35 I T = 25C Continuous Drain Current, V 10V A D C GS I T = 100C Continuous Drain Current, V 10V 24 D C GS 180 I Pulsed Drain Current DM 42 P T = 25C Maximum Power Dissipation W D C 0.28 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS E Single Pulse Avalanche Energy 206 mJ AS (Thermally limited) -55 to + 175 T Operating Junction and C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 3.6 C/W JC Junction-to-Ambient R 65 JA www.irf.com 1 05/15/12 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 10.7 13.5 m V = 10V, I = 21A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.6 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 55 S V = 50V, I = 21A DS D Q Total Gate Charge 54 81 nC I = 21A g D Q Gate-to-Source Charge 13 V = 50V gs DS Q Gate-to-Drain Mille) Charge 16 V = 10V gd GS t Turn-On Delay Time 16 ns V = 65V d(on) DD t Rise Time 33 I = 21A r D t Turn-Off Delay Time 54 R = 7.5 d(off) G t Fall Time 37 V = 10V f GS C Input Capacitance 2998 pF V = 0V iss GS C Output Capacitance 216 V = 50V oss DS C Reverse Transfer Capacitance 103 = 1.0MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 261 V = 0V, V = 0V to 80V , See Fig.11 oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 494 V = 0V, V = 0V to 80V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 35 A MOSFET symbol S (Body Diode) showing the G I Pulsed Source Current 180 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 21A, V = 0V SD J S GS t Reverse Recovery Time 39 59 ns T = 25C V = 85V rr J R 47 71 T = 125C I = 21A J F di/dt = 100A/s Q Reverse Recovery Charge 63 95 nC T = 25C rr J 90 135 T = 125C J I Reverse Recovery Current 2.9 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging oss temperature. time as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.93mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 50 , I = 21A, V =10V. Part not recommended for use G AS GS C while V is rising from 0 to 80% V . oss DS DSS above this value. Pulse width 400 s duty cycle 2%. 2 www.irf.com