Data Sheet PD60254F IR1167ASPbF IR1167BSPbF TM SmartRectifier CONTROL IC Features 50ns turn-off propagation delay Secondary side high speed SR controller Vcc range from 11.3V to 20V DCM, CrCM and CCM flyback topologies Direct sensing of MOSFET drain voltage 200V proprietary IC technology Minimal component count Max 500KHz switching frequency Simple design Anti-bounce logic and UVLO protection Lead-free 7A peak turn off drive current Compatible with 1W Standby, Energy Star, CECP, etc. Micropower start-up & ultra low quiescent current 10.7/14.5V gate drive clamp Description Package IR1167S is a smart secondary side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback converters. The IC can control one or more paralleled N-MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transi- tion. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in continuous, discontinuous 8-Lead SOIC and critical current mode operation and both fixed and variable frequency modes. IR1167 Application Diagram Vin Rs Rdc XFM Cdc U1 Cs 1 8 VCC VGATE Ci 2 7 OVT GND 3 6 Co MOT VS RMOT 4 5 EN VD Rg IR1167S Rtn Q1 www.irf.com 1 PDF created with pdfFactory trial version www.pdffactory.com LOADIR1167AS/BS Absolute Maximum Ratings Stress beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions are not implied. All voltages are absolute voltages referenced to GND. Thermal resistance and power dissipation are measured under board mounted and still air conditions. Parameters Symbol Min. Max. Units Remarks Supply Voltage V -0.3 20 V CC Enable Voltage V -0.3 20 V EN Cont. Drain Sense Voltage V -3 200 V D Pulse Drain Sense Voltage V -5 200 V D Source Sense Voltage V -3 20 V S Gate Voltage V -0.3 20 V V =20V, Gate off GATE CC Operating Junction Temperature T -40 150 C J Storage Temperature T -55 150 C S Thermal Resistance R 128 C/W SOIC-8 qJA Package Power Dissipation P 970 mW SOIC-8, T =25C D AMB ESD Protection V 2 kV Human Body Model* ESD Switching Frequency fsw 500 kHz * Per EIA/JESD22-A114-B( discharging a 100pF capacitor through a 1.5kW series resistor). www.irf.com 2 PDF created with pdfFactory trial version www.pdffactory.com