Product Information

IPD50R500CEAUMA1

IPD50R500CEAUMA1 electronic component of Infineon

Datasheet
550V 7.6A 500mO@13V,2.3A 57W N Channel TO-252 MOSFETs ROHS

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6591 ea
Line Total: USD 0.66

2660 - Global Stock
Ships to you between
Tue. 14 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2660 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.6591
10 : USD 0.6495
25 : USD 0.5669
100 : USD 0.4041
250 : USD 0.396
500 : USD 0.396
1000 : USD 0.396

347 - WHS 2


Ships to you between
Tue. 21 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 1.1877
10 : USD 1.0063
30 : USD 0.9076
100 : USD 0.7951
500 : USD 0.7459
1000 : USD 0.7241

     
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RoHS - XON
Icon ROHS
Vds - Drain-Source Breakdown Voltage
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R500CE Data Sheet Rev. 2.2 Final Power Management & Multimarket500V CoolMOS CE Power Transistor IPD50R500CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and 2 1 offering the best cost down performance ratio available on the market. 3 Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Drain Easy to use/drive Pin 2 Pb-free plating, Halogen free mold compound Qualified for standard grade applications Gate Pin 1 Applications Source Pin 3 PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 550 V DS j,max R 0.5 DS(on),max Q 18.7 nC g.typ ID,pulse 24 A E 400V 2.02 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPD50R500CE PG-TO 252 50S500CE see Appendix A Final Data Sheet 2 Rev. 2.2, 2015-11-17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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